Organic light emission diode and preparation method thereof
An electroluminescent device and luminescent technology, which is applied in the manufacture of organic semiconductor devices, electric solid devices, semiconductor/solid state devices, etc., can solve the problems affecting the light efficiency and life of the device, strong diffusion ability, and small volume of alkali metal ions , to prolong the service life
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Embodiment 1
[0065] A method for preparing an organic electroluminescent device, comprising the following steps:
[0066] (1) Provide a glass substrate 1, place the substrate 1 in deionized water containing detergent for ultrasonic cleaning, clean it with isopropanol and acetone in ultrasonic for 20 minutes, and then dry it with nitrogen; In the coating system, the anode 2 is prepared on the glass substrate 1 by magnetron sputtering, the material of the anode 2 is ITO, the thickness is 100nm, and the sputtering rate is 2nm / s. Then in a vacuum of 1×10 -4 In the vacuum coating chamber of Pa, the hole transport layer 3 and the light-emitting layer 4 are vacuum-evaporated sequentially on the anode 2. The material of the hole transport layer 3 is MeO-TPD doped with F6-TNAP. The mass fraction in the layer is 5%; the thickness of the hole transport layer 3 is 60nm; the material of the light emitting layer 4 is DPVBi, the thickness is 15nm, and the evaporation rate of the hole transport layer 3 a...
Embodiment 2
[0073] A method for preparing an organic electroluminescent device, comprising the following steps:
[0074] (1) Provide a glass substrate. Place the substrate in deionized water containing detergent for ultrasonic cleaning. After cleaning, use isopropanol and acetone in ultrasonic treatment for 20 minutes, and then blow dry with nitrogen. In the vacuum coating system, the anode is prepared on the glass substrate by magnetron sputtering, the material of the anode is GZO, the thickness is 70nm; the sputtering rate is 0.2nm / s. Then in a vacuum of 1×10 -3 In the vacuum coating chamber of Pa, the hole transport layer and the light-emitting layer are vacuum-evaporated sequentially on the anode. The material of the hole transport layer is NPB doped with F4-TCNQ. The mass fraction of F4-TCNQ in the hole transport layer The thickness of the hole transport layer is 40nm; the material of the light-emitting layer is TPBi doped with FIrpic, the doping mass fraction of FIrpic in TPBi is 1...
Embodiment 3
[0081] A method for preparing an organic electroluminescent device, comprising the following steps:
[0082] (1) Provide a glass substrate. Place the substrate in deionized water containing detergent for ultrasonic cleaning. After cleaning, use isopropanol and acetone in ultrasonic treatment for 20 minutes, and then blow dry with nitrogen. In the vacuum coating system, the anode is prepared on the glass substrate by magnetron sputtering, the anode material is AZO, the thickness is 200nm; the sputtering rate is 1nm / s. Then in a vacuum of 1×10 -5 In the vacuum coating chamber of Pa, the hole transport layer and the light-emitting layer are vacuum-evaporated sequentially on the anode. The material of the hole transport layer is 2-TNATA doped with F2-TCNQ, and the F2-TCNQ in the hole transport layer The mass fraction is 30%; the thickness of the hole transport layer is 100nm; the material of the light-emitting layer is Alq doped with DCJTB 3 , DCJTB at Alq 3 The mass fraction o...
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