Organic light emitting diode and preparation method thereof
An electroluminescence device and electroluminescence technology, which can be applied in the fields of electric solid state devices, semiconductor/solid state device manufacturing, electrical components, etc., and can solve the problem of low light extraction efficiency and so on.
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Embodiment 1
[0068] a) Select a transparent polyurethane plastic film with a high refractive index as the high refractive index layer. First, a transparent ITO anode with a thickness of 100nm is deposited on the surface of the polyurethane plastic film, and a square jig is used to make micro-pattern textures on the other surface of the plastic film, and a multi-layer pattern with a thickness of 5 μm and a spacing of 5 μm is made on the other surface of the plastic film. evenly spaced square bumps.
[0069] Select a white glass plate, and sputter a layer of anti-reflection film on both sides of the white glass plate by vacuum sputtering. The material of the anti-reflection film is SiGe, and the background vacuum is 1×10 －5 Pa, thickness 20nm.
[0070] The side of the plastic film with the square protrusions was placed on the anti-reflection film on the side of the white glass plate, the micropatterned texture was attached to the anti-reflection film, and a space was created between the two...
Embodiment 2
[0088] a) Select a transparent polyurethane plastic film with a high refractive index as the high refractive index layer. First, a transparent ITO anode with a thickness of 100nm is deposited on the surface of the polyurethane plastic film, and a square jig is used to make micro-pattern textures on the other surface of the plastic film, and a multi-layer pattern with a thickness of 10 μm and a spacing of 10 μm is produced on the other surface of the plastic film. evenly spaced square bumps.
[0089] Select a white glass plate, and sputter a layer of anti-reflection film on both sides of the white glass plate by vacuum sputtering. The material of the anti-reflection film is SiGe, and the background vacuum is 1×10 －5 Pa, thickness 20nm.
[0090] The side of the plastic film with the square protrusions was placed on the anti-reflection film on the side of the white glass plate, the micropatterned texture was attached to the anti-reflection film, and a space was created between t...
Embodiment 3
[0108] a) Select a transparent polyurethane plastic film with a high refractive index as the high refractive index layer. First, a transparent ITO anode with a thickness of 100nm is deposited on the surface of the polyurethane plastic film, and a square jig is used to make a micro-pattern texture on the other surface of the plastic film, and a multi-layer pattern with a thickness of 15 μm and a spacing of 15 μm is produced on the other surface of the plastic film. evenly spaced square bumps.
[0109] Select a white glass plate, and sputter a layer of anti-reflection film on both sides of the white glass plate by vacuum sputtering. The material of the anti-reflection film is SiGe, and the background vacuum is 1×10 －5 Pa, thickness 20nm.
[0110] The side of the plastic film with the square protrusions was placed on the anti-reflection film on the side of the white glass plate, the micropatterned texture was attached to the anti-reflection film, and a space was created between ...
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