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Composition, pattern forming method, and manufacturing methods of crystal particles and display device

A composition and pattern technology, applied in photosensitive resin composition and its application field, can solve the problems of insufficiency of evaporation and poor peeling property, etc.

Active Publication Date: 2014-12-24
CHI MEI CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the photoresist pattern formed by using the negative photosensitive resin composition has the problems of poor peelability from the substrate and poor resistance to the evaporation process.

Method used

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  • Composition, pattern forming method, and manufacturing methods of crystal particles and display device
  • Composition, pattern forming method, and manufacturing methods of crystal particles and display device
  • Composition, pattern forming method, and manufacturing methods of crystal particles and display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0135] 40 parts by weight of novolak resin A-1-1, 60 parts by weight of novolac resin A-2-1, 0.1 parts by weight of 2,4-bis(trichloromethyl)-6-p-methoxy Styryl-s-triazine, 0.1 parts by weight of tripentylamine (tripentylamine), and 5 parts by weight of CYMEL303 were added to 100 parts by weight of propylene glycol monomethyl ether acetate (PGMEA), and shaken After stirring evenly with a shaking type stirrer, the negative photosensitive resin composition of Example 1 can be prepared.

[0136]The negative photosensitive resin composition of Example 1 above was coated on a glass substrate by spin coating to form a coating film. Next, the coating film was pre-baked at 100° C. for 90 seconds to form a photoresist film with a thickness of about 3.4 μm. Then, utilize 80mJ / cm2 ultraviolet light to carry out pattern exposure to photoresist film (exposure machine model is AG500-4N, manufactured by M&R Nanotechnology (M&R Nanotechnology); ) photomask (manufactured by NIPPON FILCON). Th...

Embodiment 2

[0138] -Example 2 to Example 10-

[0139] The negative photosensitive resin composition and the photoresist pattern of embodiment 2 to embodiment 10 are prepared with the same steps as embodiment 1, and its difference lies in: changing the type and usage amount of ingredients (as shown in table 3 shown), wherein the compounds corresponding to the labels in Table 3 are shown in Table 2. In addition, the peelability of the photoresist pattern formed by the negative photosensitive resin composition and the degree of resistance to the vapor deposition process were evaluated, and the results are shown in Table 3.

[0140] Table 2

[0141]

[0142]

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Abstract

The invention provides a negative photosensitive resin composition, a pattern forming method, a metal pattern forming method, a manufacturing method of light emitting diode crystal particles and a manufacturing method of an organic light emitting display device. The negative photosensitive resin composition including a novolac resin (A), a photoacid generator (B), a basic compound (C), a cross-linking agent (D), and a solvent (E). The novolac resin (A) includes a hydroxy-type novolac resin (A-1) and a xylenol-type novolac resin (A-2). The hydroxy-type novolac resin (A-1) is synthesized by polycondensing a hydroxybenzaldehyde compound and an aromatic hydroxy compound. The xylenol-type novolac resin (A-2) is synthesized by polycondensing an aldehyde compound and a xylenol compound.

Description

【Technical field】 [0001] The present invention relates to a photosensitive resin composition and its application, and in particular to a negative photosensitive resin composition and its application. 【Background technique】 [0002] In recent years, with the development of the semiconductor industry, liquid crystal display (LCD) and organic electro-luminescence display device (OELD), the accompanying demand for size reduction has made lithography (photolithography) technology has become a very important issue. In the photolithography process, the required photoresist pattern must be finer in order to achieve the purpose of size reduction. [0003] Generally speaking, in the semiconductor process, metallic patterns can be fabricated by a lift-off method. The steps of the lift-off method are as follows: firstly, a photoresist pattern is formed on the substrate. Next, a metal layer is vapor-deposited on the substrate on which the photoresist pattern is formed. Finally, the p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/038G03F7/00H01L51/56
CPCG03F7/0382G03F7/0751H01L2933/0016H10K71/621H10K71/10
Inventor 蔡宇杰
Owner CHI MEI CORP
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