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Plasma etching method and plasma etching apparatus
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A plasma and etching technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as difficult to control the groove width according to the design, and achieve the effect of improving the shape
Active Publication Date: 2014-12-31
TOKYO ELECTRON LTD
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Due to the development of miniaturization, the problem of this bow becomes obvious, and it is difficult to control the width of the groove according to the design
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Embodiment 1
[0098] Next, use the figure 2 Wafer with the film structure shown, changing the COS gas and Cl 2 The flow rate of the gas was etched, and an experiment was performed to study the relationship between the flow rate ratio, CD, and taper angle. In the following experimental results, a wafer with mask 203 / organic film 202 / underlayer film 201 = 28 / 170 / 40 nm was used. In addition, there are the following three types of process conditions.
[0099] Supply gas: O 2 / He / Cl 2 / COS=50 / 160 / 20 / 8sccm···(1)
[0100] =50 / 160 / 13 / 6sccm...(2)
[0101] =50 / 160 / 16 / 8sccm...(3)
[0102] The preferred flow rate of each gas is: COS gas is 3-10 sccm, Cl 2 Gas 10-25sccm, He gas 100-200sccm, O 2 The gas is 45-100 sccm. Other steps and conditions are the same as those of the aforementioned organic film etching.
[0103] Figure 5 (a)~(c) represent the use of gas containing COS and Cl 2 An example of the experimental results of the cross-section ...
Embodiment 2
[0114] Next, use the figure 2 wafer with the film structure shown, changing O 2 gas relative to COS gas and Cl 2 The flow rate of the gas was etched, and an experiment was performed to study the relationship between the flow rate ratio, CD, and taper angle. The following three types of process conditions were used in the following experiments.
[0115] Supply gas: O 2 / He / Cl 2 / COS=40 / 160 / 20 / 8sccm···(5)
[0116] =50 / 160 / 20 / 8sccm···(6)
[0117] =70 / 160 / 20 / 8sccm...(7)
[0118] The preferred flow rate of each gas is: COS gas is 3-10 sccm, Cl 2 Gas 10-25sccm, He gas 100-200sccm, O 2 The gas is 45-100 sccm. Other steps and conditions are the same as those of the organic film etching in Example 1.
[0119] Figure 9 (a) to (c) represent the use of gas containing COS, Cl 2 Gas and O 2 A diagram showing an example of the experimental results of the cross section of the groove when the process gas of the gas is used for etchin...
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technical field [0001] The invention relates to a plasma etching method and a plasma etching device. Background technique [0002] It is known that when a groove is formed on a film to be processed in an etching process using plasma, the side wall of the groove is scraped off more than necessary, and the space in the middle of the groove bulges to form a bow. Due to progress in miniaturization, the problem of the bow becomes apparent, and it is difficult to control the width of the groove according to the design. As a countermeasure against this, Patent Document 1 below discloses a technique of adding COS (carbonyl sulfide) to an etching gas. [0003] prior art literature [0004] patent documents [0005] Patent Document 1: Japanese Patent Laid-Open No. 2012-204668 Contents of the invention [0006] The problem to be solved by the invention [0007] However, in the case of forming a groove on the film to be processed in the etching process, if the side walls of the ...
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