Semiconductor device preparation method

Abstract

The invention provides a semiconductor device preparation method. A non-crystallizing region is formed in a semiconductor substrate, and then a source / drain region in a semiconductor device is formed in the non-crystallizing region. The non-crystallizing region can restrain generation of defects at the tail end of the source / drain region, and therefore electric leakage between the source / drain region and the semiconductor substrate of the semiconductor device can be well lowered; besides, after a virtual grid structure is removed, a short channel suppression region is formed in a channel region, the short channel effect of the semiconductor device can be suppressed, and the demand that the feature size of the device gradually decreases is met.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for preparing a semiconductor device. Background technique [0002] With the advancement of the semiconductor industry and the development of Moore's Law, the feature size and depth of MOS (metal oxide semiconductor) devices are shrinking, especially when entering the node of 65 nanometers and below, the channel of MOS devices is getting shorter and shorter. The effect (SCE) is getting more and more serious, and the source / drain DIBL (Inductive Barrier Lowering) leakage is serious. [0003] Due to the continuous shrinking of the feature size and depth, the source / drain region and the source / drain extension (Source / Drain Extension) are required to be correspondingly shallower, and the doped junction with a junction depth below 100nm is usually called an ultra-shallow junction ( USJ), the ultra-shallow junction can better improve the short-channel effect of the ...

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Problems solved by technology

During the subsequent annealing process and activation of semiconductor devices, EOR defects are difficult to be repaired by annealing, which causes serious problems: on the one hand, such EOR defects will enhance the diffusion of previously implanted germanium, boron (or BF2) ions, Increasing the short channel effect is not conducive to the formation of ultra-shallow junctions; on the other hand, the formed amorphous layer recrystallizes, and the EOR defects will dissolve the semiconductor interstitial atoms that effectively migrate to the surface of the device structure, which is easy to cause the transient enhanced diffusion effect (TED ), resulting in short-channel device characteristic degradation and greater junction leakage

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