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Polishing composition, polishing method using same, and method for producing substrate

一种制造方法、组合物的技术，应用在氧化硅层的研磨对象物领域，能够解决易沉降保存稳定性、氧化铈磨粒昂贵等问题

Active Publication Date: 2015-01-14
FUJIMI INCORPORATED
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, cerium oxide abrasive grains are generally expensive, and are also disadvantageous in terms of poor storage stability due to easy sedimentation.

Method used

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  • Polishing composition, polishing method using same, and method for producing substrate
  • Polishing composition, polishing method using same, and method for producing substrate
  • Polishing composition, polishing method using same, and method for producing substrate

Examples

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Embodiment Construction

[0020] One embodiment of the present invention will be described below.

[0021] The polishing composition of the present embodiment is prepared by mixing a water-soluble polymer and abrasive grains in water. Therefore, the polishing composition contains a water-soluble polymer and abrasive grains.

[0022] The polishing composition of the present embodiment is used for polishing an object to be polished having a silicon nitride layer and a silicon oxide layer directly disposed on the silicon nitride layer, and in other words, is used to polish the object to be polished to produce a substrate the use of. The silicon nitride layer exhibits a positive zeta potential below pH 3.5.

[0023] The polishing composition of the present embodiment is not particularly intended to be used for such applications of polishing metals, and therefore does not contain components such as oxidizing agents and metal anti-corrosion agents generally contained in metal polishing compositions.

[00...

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Abstract

This polishing composition contains an abrasive grit and a water-soluble polymer. The water-soluble polymer is an anionic compound having an acid dissociation constant (pKa) of no greater than 3. Cited as specific examples of such a compound are polyvinyl sulfonic acid, polystyrene sulfonic acid, polyallyl sulfonic acid, polyacrylic acid ethyl sulfonic acid, polyacrylic acid butyl sulfonic acid, poly(2-acrylamide-2-methylpropane sulfonic acid), and polyisoprene sulfonic acid. The abrasive grit exhibits a negative zeta potential at a pH of 3.5 and lower. Colloidal silica can be cited as a specific example of such an abrasive grit.

Description

technical field [0001] The present invention relates to a polishing composition used, for example, for polishing an object to be polished having a silicon nitride layer and a silicon oxide layer provided on the silicon nitride layer. The present invention also relates to a polishing method and a substrate manufacturing method using the polishing composition. Background technique [0002] The polishing process in the manufacture of semiconductor devices is generally performed by chemical mechanical polishing (CMP). Specifically, in shallow trench isolation (shallow trench isolation, STI), planarization of interlayer insulating film (ILD film), formation of tungsten plug, formation of multilayer wiring including copper and low dielectric constant film, etc. , use CMP. Among them, generally, the silicon nitride layer is used as a stopper in STI, and the silicon oxide layer is removed by grinding by CMP. [0003] As disclosed in Patent Documents 1 to 3, it is known to use cer...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3105B24B37/04C09K3/14
CPCC09G1/02B24B37/044H01L21/31053C09K3/1436C09K3/1463H01L21/76224C09K3/1454H01L21/30625H01L21/31055
Inventor 大和泰之赤塚朝彦
Owner FUJIMI INCORPORATED
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