Method for preparing high-performance metal nanowire transparent conducting thin film

A technology of transparent conductive film and metal nanowire, which is applied in the direction of cable/conductor manufacturing, conductive layer on insulating carrier, circuit, etc., which can solve the problems of high price and brittleness of transparent conductive film, and achieve low cost and high transmittance efficiency, high conductivity

Inactive Publication Date: 2015-01-21
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
View PDF6 Cites 27 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above-mentioned transparent conductive film is brittle,

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing high-performance metal nanowire transparent conducting thin film
  • Method for preparing high-performance metal nanowire transparent conducting thin film
  • Method for preparing high-performance metal nanowire transparent conducting thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] The present invention will be described in detail below in conjunction with specific embodiments.

[0026] 1. Surface hydrophilic treatment: put the clean glass into an ozone plasma etching machine, and treat the surface at 90°C for 30 minutes;

[0027] 2. Scratch coating: use 3M adhesive tape to fix the glass with the hydrophilic side up on the toughened film board. Using the method of scraping, drop the prepared 0.35mg / ml silver nanowire colloid (3.5mg silver nanowires dispersed in 10ml of absolute ethanol) on the film, and then use a glass rod to scrape back and forth on the surface of the film for several times. After the second time, dry the surface of the substrate with a hair dryer;

[0028] 3. Repeat step 2 seven times to scrape and coat 8 layers of silver nanowire films in total.

[0029] 4. Heat treatment to improve the conductivity of the film: in step 3, the sample is heat-treated on a heating plate at 200°C for 10 minutes;

[0030] 5. Taking polyvin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for preparing a high-performance metal nanowire transparent conducting thin film. According to the method, expensive experiment equipment is not needed, after the surface hydrophiling processing is carried out through an ozone plasma etching machine, knife coating is carried out for preparing the transparent conducting thin film, fast drying is carried out after knife coating, the conductivity of the conducting thin film is improve through certain processing, a protection layer is coated, and after the stability of the thin film is improved, the high-conductivity, high-transmittance, high-stability and low-haze metal nanowire transparent conducting thin film is achieved. According to the method, operation is easy, cost is low, and large-scale production can be achieved.

Description

technical field [0001] The invention relates to a preparation method of a transparent conductive film, in particular to a preparation method of a high-performance metal nanowire transparent conductive film. the Background technique [0002] Thin films with high conductivity and high transmittance are the key to many modern devices, such as touch screens, electronic paper, organic light-emitting diodes (OLEDs), liquid crystal displays (LCDs), solar cells, etc. For solar cells, the transparent conductive film is used in the photoanode to collect the discrete carriers in the absorber layer, while in organic light-emitting diodes (OLEDs), it is mainly used for carrier injection. The performance of these devices is gradually improving, thereby expanding the industrial demand for transparent conductive films. Therefore, many researchers are working on preparing transparent conductive films by various methods, and have made some progress. Various transparent conductive films ha...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01B13/00B22F1/02H01B5/14
Inventor 何微微王可冉云霞季书林叶长辉
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products