A Method for Suppressing Higher Order Modes of Gaas-Based Lasers

A laser and high-order mode technology, applied in the field of semiconductor optoelectronic devices, to achieve the effect of ensuring single-mode lasing characteristics

Active Publication Date: 2017-09-26
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
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Problems solved by technology

However, these methods have certain limitations in improving the difference between the fundamental mode and the higher-order mode

Method used

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  • A Method for Suppressing Higher Order Modes of Gaas-Based Lasers
  • A Method for Suppressing Higher Order Modes of Gaas-Based Lasers

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Embodiment Construction

[0016] see figure 1 As shown, the present invention provides a method for suppressing GaAs-based laser high-order modes, comprising the following steps:

[0017] Step 1: On the gallium arsenide substrate 10, an n-type confinement layer 11, an n-type high-refractive index insertion layer 12, an n-type low-refractive-index insertion layer 13, an n-type waveguide layer 14, a quantum well active region 15, p-type waveguide layer 16, p-type low refractive index insertion layer 17, p-type high refractive index insertion layer 18, p-type confinement layer 19 and p-type contact layer 20;

[0018] Step 2: wet-etch or dry-etch the p-type contact layer 20 and the p-type confinement layer 19 in a ridge shape, and the depth of the ridge-type etching reaches the p-type confinement layer 19 . The wet etching operation is relatively simple and can be used when the etching depth is not very deep, but it is easy to cause undercutting and has a great impact on the device. If the corrosion dept...

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Abstract

A method for suppressing high-order modes of a GaAs-based laser, comprising the following steps: Step 1: sequentially manufacturing an n-type confinement layer, an n-type high-refractive-index insertion layer, an n-type low-refractive-index insertion layer, and an n-type waveguide on a gallium arsenide substrate Layer, quantum well active region, p-type waveguide layer, p-type low refractive index insertion layer, p-type high refractive index insertion layer, p-type confinement layer and p-type contact layer; step 2: connect the p-type contact layer and p-type Wet etching or dry etching of the limiting layer to form a ridge; step 3: growing a layer of oxide mold on the top of the ridge, and using photolithography to fabricate a p-type ohmic electrode on the upper surface of the p-type contact layer; Step 4: Thin and clean the gallium arsenide substrate, and make n-type ohmic electrodes on the back of the gallium arsenide substrate to form a laser; step 5: perform cleavage, coat the cavity surface of the laser, and finally package it in a tube On the shell, the preparation is done. The invention increases the optical loss of the high-order mode by properly doping the high-refractive index layer, and improves the lasing threshold of the high-order mode.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a design and manufacturing method of a laser suppressing the high-order mode of a GaAs-based laser. Background technique [0002] With the rapid development of semiconductor optoelectronic devices, high-power semiconductor lasers came into being. Due to the advantages of small size, low price, high electro-optical conversion efficiency and long life of semiconductor lasers, semiconductor lasers have a very wide range of applications in the field of optoelectronics. Semiconductor lasers play an important role in the fields of industrial processing, medical treatment, military and theoretical research. Gallium arsenide is the most well-studied material so far compared to other semiconductor III-V materials. Therefore, people have the highest performance requirements for gallium arsenide lasers. This is reflected in the fact that gallium arsenide laser...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/343
Inventor 李翔赵德刚江德生刘宗顺陈平朱建军
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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