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Sapphire single crystal growth automatic comprehensive control process

A comprehensive control, sapphire technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of low degree of automation of equipment, high dependence on personnel, no crystal growth, etc., to improve equipment operability and reduce production. Cost, saving manpower and material resources

Active Publication Date: 2017-01-04
UNIONLIGHT TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the growth of sapphire crystals, especially crystals above 80 kilograms, is highly dependent on personnel, and the operation interface of the growth furnace is complicated, and the degree of automation of the equipment is low. It takes at least 3-6 months for beginners to master the operation of the entire set of equipment. The crystal growth furnace requires the operator to observe with the naked eye, facing the high-temperature melt for a long time, which has a great impact on the operator's vision
In order to solve the above problems, some crystal growth manufacturers have developed automatic control technology to grow crystals, but the accuracy of automatic control is generally not high, and there are only some stages (except seeding and shouldering stages) that use automatic control, or only for The problem of the automatic control process of the two parameter settings of heating and cooling power and crystal weight, there is no systematic automatic comprehensive control method for crystal growth

Method used

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  • Sapphire single crystal growth automatic comprehensive control process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Embodiment 1: An automatic comprehensive control process for sapphire single crystal growth. A weighing sensor (with a weight accuracy of 1 / 100,000), a temperature sensor (with a temperature control accuracy of 0.1°C), a water flow sensor, The water pressure transmitter, weighing sensor, temperature sensor, water flow sensor and water pressure transmitter are all connected to the operating system, and the operating system reads the actual weight of the crystal weighed by the weighing sensor, compares the crystal growth curve, and adjusts the output power , temperature and water flow, so that the crystal grows automatically according to the established process. The specific process is as follows:

[0026] (1) Charging: put the high-purity alumina raw material into the crucible, put the crucible into the sapphire generation furnace, and close the furnace door;

[0027] (2) Heating up: Start the operating system and perform low-vacuum operation. When the vacuum degree reac...

Embodiment 2

[0043] Embodiment 2: An automatic comprehensive control process for sapphire single crystal growth. A weighing sensor (with a weight accuracy of 1 / 100,000), a temperature sensor (with a temperature control accuracy of 0.1°C), a water flow sensor, The water pressure transmitter, weighing sensor, temperature sensor, water flow sensor and water pressure transmitter are all connected to the operating system, and the operating system reads the actual weight of the crystal weighed by the weighing sensor, compares the crystal growth curve, and adjusts the output power , temperature and water flow, so that the crystal grows automatically according to the established process. The specific process is as follows:

[0044] (1) Charging: put the high-purity alumina raw material into the crucible, put the crucible into the sapphire generation furnace, and close the furnace door;

[0045] (2) Heating up: Start the operating system and perform low-vacuum operation. When the vacuum degree reac...

Embodiment 3

[0058] Embodiment 3: An automatic comprehensive control process for sapphire single crystal growth. A weighing sensor (with a weight accuracy of 1 / 100,000), a temperature sensor (with a temperature control accuracy of 0.1°C), a water flow sensor, The water pressure transmitter, weighing sensor, temperature sensor, water flow sensor and water pressure transmitter are all connected to the operating system, and the operating system reads the actual weight of the crystal weighed by the weighing sensor, compares the crystal growth curve, and adjusts the output power , temperature and water flow, so that the crystal grows automatically according to the established process. The specific process is as follows:

[0059] (1) Charging: put the high-purity alumina raw material into the crucible, put the crucible into the sapphire generation furnace, and close the furnace door;

[0060] (2) Heating up: Start the operating system and perform low vacuum operation. When the vacuum degree reac...

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Abstract

The invention relates to an automatic integrated control process for sapphire single crystal growth. The process comprises the following steps: mounting a weighing sensor and a temperature sensor on a sapphire growth furnace, automatically reading the actual crystal weight obtained by the weighing sensor, comparing crystal growth curve parameters introduced into the system, and adjusting the output power, so that the aim of controlling automatic crystal growth is achieved; performing automatic regulation and control by utilizing the mounted temperature sensor, a water flow sensor and a water pressure transducer to realize automatic integrated control of parameters such as water temperature, water pressure, pulling rate and rotating speed needed by sapphire crystal growth, so that stable crystal growth is guaranteed, and the crystal quality is improved. Meanwhile, according to the designed special man-machine operating system, the operability of equipment can be obviously improved, the dependence of the original sapphire growth on a human body is reduced, lots of manpower and material resources are saved, and the production cost is reduced.

Description

technical field [0001] The invention relates to an automatic comprehensive control process for sapphire single crystal growth, which belongs to the technical field of crystal growth. Background technique [0002] Sapphire single crystal has excellent comprehensive properties such as good transparency, high mechanical strength, excellent chemical stability and good thermal conductivity. First of all, it has ultra-high hardness and extremely low friction coefficient, which is second only to diamond in nature; The wavelength band (300nm~5000nm) has high optical transmission performance; sapphire single crystal also has excellent acid and alkali corrosion resistance, and generally cannot be corroded by acid and alkali at room temperature or even in a molten state, so sapphire single crystal is used as a commercial high-end optoelectronic material The application of modernization emerges as the times require. [0003] At present, the growth of sapphire crystals, especially cryst...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/20C30B15/20
CPCC30B15/20C30B29/20
Inventor 黄小卫裴广庆王佳麒罗亮远柳祝平
Owner UNIONLIGHT TECH