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Silicon-based silica waveguide and detector vertical coupling structure and preparation method thereof

A silicon dioxide, vertical coupling technology, applied in the coupling of optical waveguides, light guides, instruments, etc., can solve the problems of inability to detect light signals, increase the size of the device, low production efficiency, etc., and achieve reduced production costs and reliable coupling. High performance and long detection distance

Active Publication Date: 2015-02-04
THE 3RD ACAD 8358TH RES INST OF CASC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The above optoelectronic integration method solves the reliability problem of discrete detection elements, but the cost is high and the production efficiency is low
[0004] The above optoelectronic integration method couples light from the waveguide to the optical surface, and this type of method has the following disadvantages: 1. The optical fiber or lens connected to the light-emitting surface increases the volume of the device; 2. The light-emitting surface can only be used as a waveguide terminal, using this type of coupling method Unable to detect signal of light traveling in waveguide

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  • Silicon-based silica waveguide and detector vertical coupling structure and preparation method thereof
  • Silicon-based silica waveguide and detector vertical coupling structure and preparation method thereof
  • Silicon-based silica waveguide and detector vertical coupling structure and preparation method thereof

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Embodiment Construction

[0029] In order to make the purpose, content and advantages of the present invention clearer, the specific implementation of the present invention will be described in further detail below with reference to the accompanying drawings and embodiments.

[0030] In the description of the present invention, it should be noted that the terms "upper", "lower", "left", "right", "top", "bottom", "inner", "outer", etc. indicate the orientation or position The relationship is based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, therefore It cannot be understood as a limitation to the present invention. In addition, the terms "first", "second", and "third" are only used for descriptive purposes, and cannot be...

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Abstract

The invention belongs to the technical field of optoelectronic integration and photoelectric detection, and discloses a silicon-based silica waveguide and detector vertical coupling structure, which comprises a substrate, a waveguide, an upper cladding and a detector, wherein the substrate is a silicon substrate which is formed with waveguide thereon; the upper cladding is formed on the waveguide; a pit is formed by thinning the upper cladding; a waveguide body electrode is formed in the pit; a photosensitive surface of the detector is coupled to the waveguide through a light guide resin layer; a light transmission direction in the waveguide is perpendicular to a light leading-out direction of the detector; and a detector electrode is connected to the waveguide body electrode through an electro-conductive resin layer. The coupling structure disclosed by the invention, which adopts a resin binding way, replaces a semiconductor process adopted by a conventional optoelectronic integration method, and reduces manufacturing cost; meanwhile, the vertical coupling method is strong in detection light on the upper surface of the waveguide, long in detection distance and relatively low in requirement on coupling precision; and relative to a scheme of light-emergency surface detection, an optoelectronic integration component is updated into a three-dimensional structure from a planar structure, and coupling reliability is high.

Description

Technical field [0001] The invention belongs to the technical field of photoelectric integration and photodetection, and relates to a silicon-based silicon dioxide waveguide and a detector vertical coupling structure and a preparation method thereof. Background technique [0002] Integrated optical circuits are widely used in the field of optical communications. Normally, in order to detect the light intensity in the waveguide, it is necessary to use a structure such as an optical fiber or a lens to couple the optical signal from the wave-derived optical surface and make it enter the detector assembly. [0003] The method of using discrete waveguides and detectors has a low integration level, which is likely to cause reliability and volume problems. To solve the above problems, related optoelectronic integration methods are available. For example, the patent 200410040306.6 provides a method for manufacturing a monolithic integrated photoelectric circuit. The method makes the opti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B6/42
CPCG02B6/4239
Inventor 李岩张岩康佳
Owner THE 3RD ACAD 8358TH RES INST OF CASC