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High-capacity hydrogen storage film and preparation method thereof

A high-capacity, thin-film technology, applied in vacuum evaporation plating, coating, sputtering plating, etc., can solve the problems of low hydrogen absorption and desorption temperature, poor stability and cycle stability, and high hydrogen absorption and desorption temperature, and achieves high absorption and desorption. The effect of fast hydrogen rate, good application prospect and high electrochemical discharge capacity

Inactive Publication Date: 2015-02-11
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The first object of the present invention is to provide a new type of hydrogen storage film with high hydrogen storage capacity, low hydrogen absorption and desorption temperature, good kinetic performance and cycle stability, thereby solving the problem of low hydrogen storage capacity of existing hydrogen storage materials , the problems of high hydrogen absorption and desorption temperature, poor stability and cycle stability

Method used

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  • High-capacity hydrogen storage film and preparation method thereof
  • High-capacity hydrogen storage film and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0034] Embodiment 1, preparation 100nm is covered with the Mg of Pd layer 78 Y 22 film

[0035] The first step, substrate cleaning

[0036] Choose ordinary glass as the substrate. Before sputtering, the glass substrate was ultrasonically cleaned in deionized water, acetone and ethanol solutions for 15 minutes to remove surface impurities, and then the substrate was allowed to air dry naturally.

[0037] The second step, film preparation

[0038] Put the air-dried glass substrate into the chamber of the magnetron sputtering apparatus, and evacuate to 2×10 -4 Pa.

[0039] Argon gas was introduced into the chamber of the magnetron sputtering apparatus, and the thin film was prepared by co-sputtering with Mg and Y targets by magnetron sputtering. The specific sputtering conditions are: the background vacuum is 2×10 -4 Pa; the flow rate of argon gas is 76 sccm; the working pressure of argon gas is 0.6 Pa; the substrate temperature is 25°C; the sputtering powers of Mg and Y a...

Embodiment 2

[0041] Embodiment 2, preparation 100nm thick Mg covered with Pd layer 37 Y 63 film

[0042] The first step, substrate cleaning

[0043] In this method, a quartz plate is selected as the substrate. Before sputtering, the quartz slices were ultrasonically cleaned in deionized water, acetone and ethanol solutions for 15 minutes to remove surface impurities. Then wait for the substrate to dry naturally, put it into the chamber of the magnetron sputtering apparatus, and evacuate to 2×10 -4 Pa.

[0044] The second step, film preparation

[0045]Argon gas was introduced into the chamber of the magnetron sputtering apparatus, and the thin film was prepared by co-sputtering with Mg and Y targets by magnetron sputtering. The specific sputtering conditions described are: the background vacuum is 2×10 -4 Pa; the flow rate of argon gas is 76 sccm; the working pressure of argon gas is 0.6 Pa; the substrate temperature is 25°C; the sputtering powers of Mg and Y are 14W and 45W, respec...

Embodiment 3

[0047] Embodiment 3, prepare 100nm thick Mg covered with Pd layer 28 Y 72 film

[0048] The first step, substrate cleaning

[0049] In this method, a silicon wafer is selected as the substrate. Before sputtering, silicon wafers were ultrasonically cleaned in deionized water, acetone, and ethanol solutions for 15 minutes to remove surface impurities. Then wait for the substrate to dry naturally, put it into the chamber of the magnetron sputtering apparatus, and evacuate to 2×10 -4 Pa.

[0050] The second step, film preparation

[0051] Argon gas was introduced into the chamber of the magnetron sputtering apparatus, and the thin film was prepared by co-sputtering with Mg and Y targets by magnetron sputtering. The specific sputtering conditions described are: the background vacuum is 2×10 -4 Pa; the flow rate of argon gas is 76 sccm; the working pressure of argon gas is 0.6 Pa; the substrate temperature is 25°C; the sputtering powers of Mg and Y are 14W and 60W, respective...

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Abstract

The present invention discloses a novel high-capacity hydrogen storage film and a preparation method thereof, wherein the hydrogen storage film is an MgxY100-x alloy film (wherein x is less than or equal to 90 and is more than or equal to 10) with the Pd covering layer. The preparation method comprises: adopting Mg and Y as target materials, adopting a magnetron sputtering co-sputtering method to prepare an Mg-Y alloy film on a substrate, and further sputtering a layer of a Pd layer on the Mg-Y alloy film so as to protect Mg from oxidation and catalyze hydrogen dissociation. The experiment results show that the Pd / Mg78Y22 film prepared through the method can achieve the electrochemical discharge capacity of 1590.3 mAh / g without activation, and has the good hydrogenation and dehydrogenation kinetics characteristic, wherein the electrochemical discharge capacity of 1590.3 mAh / g is significantly higher than the discharge capacity of the pure magnesium film; and the alloy film achieves the complete hydrogen discharge within 10 min at a temperature of 343 K, such that the Pd / Mg-Y film provides good application prospects in the fields of the hydrogen storage materials, especially the negative electrode materials of the nickel hydrogen battery.

Description

technical field [0001] The invention relates to the fields of metal thin film materials, hydrogen storage materials and energy, in particular to a novel high-capacity hydrogen storage thin film and a preparation method thereof. Background technique [0002] As a green energy, hydrogen energy occupies an important position in the future sustainable energy due to its cleanness, easy storage and abundant resources. So far, the key factor hindering the development of "hydrogen economy" is the storage of hydrogen, so the research and development of hydrogen storage materials has become one of the keys to the practical and large-scale utilization of hydrogen energy. As the anode material of nickel-metal hydride batteries in the largest application field, hydrogen storage alloys are required to have good discharge performance, long cycle life, and suitable hydrogen decomposition pressure. Magnesium-based hydrogen storage materials have attracted the attention of scientists from al...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/14C23C14/35
Inventor 王艳艳辛恭标李伟郑捷李星国
Owner PEKING UNIV
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