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Negative photosensitive resin composition and application thereof

A technology of photosensitive resin and composition, applied in the field of photosensitive resin composition, can solve the problems of poor peeling property, intolerant of evaporation and the like

Active Publication Date: 2015-02-11
CHI MEI CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the photoresist pattern formed by using the negative photosensitive resin composition has the problems of poor peelability from the substrate and poor resistance to the evaporation process.

Method used

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  • Negative photosensitive resin composition and application thereof
  • Negative photosensitive resin composition and application thereof
  • Negative photosensitive resin composition and application thereof

Examples

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preparation example Construction

[0025] Preparation of negative photosensitive resin composition

[0026] The invention provides a negative photosensitive resin composition, which comprises an alkali-soluble resin (A), a photoacid generator (B), a basic compound (C), a crosslinking agent (D) and a solvent (E). In addition, the negative photosensitive resin composition may further include an additive (F), if necessary. Each component that is used for the negative photosensitive resin composition of the present invention will be described in detail below:

[0027] Alkali soluble resin (A)

[0028] The alkali-soluble resin (A) includes an acrylate resin (A-1) and a novolac resin (A-2). Acrylate resin (A-1) and novolac resin (A-2) are described in detail below:

[0029] Acrylic resin (A-1)

[0030] Acrylic resin (A-1) can be obtained by polymerizing monomers for polymerization in a solvent and in the presence of a polymerization initiator, wherein the monomers for polymerization include monomers of unsaturate...

Synthetic example A-1

[0180] Synthesis example A-1-1 to synthesis example A-1-12 of acrylate resin are described below:

Synthetic example A-1-1

[0182] A nitrogen inlet, a stirrer, a heater, a condenser, and a thermometer were installed on a four-necked conical flask with a volume of 500 milliliters, and nitrogen was introduced. Then, according to the reagents and dosages shown in Table 2 (the Chinese and English and abbreviations of the reagents are as shown in Table 1), add 50 parts by weight of the solvent diethylene glycol dimethyl ether (DIGLYME), propylene glycol methyl ether Acetate (propylene glycol monomethyl ether acetate, PGMEA) 250 parts by weight. Then, the temperature of the solvent was heated to 85° C. while stirring. Next, 40 parts by weight of methacrylic acid (MAA) and 60 parts by weight of dicyclopentanyl methacrylate (FA-513M) were added into the four-neck conical flask. Then, the temperature of the solution was maintained at 85° C. while stirring. Next, 2.0 parts by weight of 2,2'-azobis-2-methylbutyronitrile (2,2'-azobis(2-methylbutyronitrile), AMBN) was pre-dissolved in 120 parts by weight of t...

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Abstract

A negative photosensitive resin composition including an alkali-soluble resin (A), a photoacid generator (B), a basic compound (C), a cross-linking agent (D), and a solvent (E) is provided. The alkali-soluble resin (A) includes an acrylate resin (A-1) and a novolac resin (A-2). The acrylate resin (A-1) is synthesized by polymerizing a monomer for polymerization, wherein the monomer for polymerization includes an unsaturated carboxylic acid or unsaturated carboxylic acid anhydride monomer (a-1-1) and a monomer (a-1-2). The monomer (a-1-2) includes a compound (a-1-2-1) with a tricyclodecane or dicyclopentadiene structure, a compound (a-1-2-2) represented by formula (1), or a combination of both. The novolac resin (A-2) is synthesized by polymerizing an aldehyde compound with an aromatic hydroxy compound, wherein the aromatic hydroxy compound includes a xylenol compound.

Description

technical field [0001] The present invention relates to a photosensitive resin composition, and in particular to a negative photosensitive resin composition. Background technique [0002] In recent years, with the development of the semiconductor industry, liquid crystal display (LCD) and organic electro-luminescence display device (OELD), the accompanying demand for size reduction has made lithography (photolithography) technology has become a very important issue. In the photolithography process, the required photoresist pattern must be finer to achieve the purpose of size reduction. [0003] Generally speaking, in the semiconductor process, metallic patterns can be fabricated by a lift-off method. The steps of the lift-off method are as follows: firstly, a photoresist pattern is formed on the substrate. Next, a metal layer is vapor-deposited on the substrate on which the photoresist pattern is formed. Finally, the photoresist pattern and the metal layer formed on the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004G03F7/038G03F7/00
CPCH01L51/5203H01L51/524G03F7/038G03F7/20G03F7/027G03F7/0045G03F7/40H10K59/122
Inventor 蔡宇杰
Owner CHI MEI CORP
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