Flash memory cell array

Abstract

The invention provides a flash memory cell array. The flash memory cell array is characterized in that a framework distribution situation of the flash memory cell array is changed while the characteristic size does not need to be reduced, a common source line which is shared by multiple bit lines and is wider in width in the prior art is split for enabling each bit line active area to be provided with one adjacent source line active area which corresponds to the bit line active area, wherein the width of each source line active area is equal to the width of the corresponding bit line active area, and the size of a source area contact hole of each source line is equal to the size of a drain area contact hole of the corresponding bit line; grid areas of memory cells in each line are connected into a bent line shape or a wavy shape, thus the current situation in the prior art that the drain area contact hole of one bit line is shared by two memory cells is changed, and the drain area contact hole of one bit line or the source area contact hole of one source line can be shared by four memory cells so as to increase the density of the flash memory cell array. Compared with the situation in the prior art that sixteen bit lines correspond to one common source line, flash memory cell array has the advantage that the density of the flash memory cell array is increased by 19%.

Description

technical field [0001] The invention belongs to the manufacturing field of semiconductor devices, and relates to a flash storage unit array, in particular to a high-density flash memory storage unit array. Background technique [0002] In general, semiconductor memories used to store data are classified into volatile memories and nonvolatile memories, volatile memories are prone to lose their data when power is interrupted, and nonvolatile memories are retained even after the power supply is turned off On-chip information. Nonvolatile semiconductor memory is characterized by low cost and high density compared to other nonvolatile storage technologies such as disk drives. Therefore, non-volatile memory has been widely used in various fields, including embedded systems, such as PCs and peripherals, telecommunication switches, cellular phones, network interconnection equipment, instrumentation and automotive devices, as well as emerging voice, image , Data storage products su...

AI Technical Summary

Problems solved by technology

[0008] However, due to the self-aligned source region process, the existing NOR (NOR gate) array structure is: a plurality of bit lines 101 share a common source line 102, and the source regions of the memory cells 100 in the same row share a common source line 102 contact holes 105; meanwhile, because the width of the common source line 102 is much larger than the width of the bit line 101, the existing NOR (NOR gate) type array structure limits the density of the memory cell array (cell array density )

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