Research method on microstructure evolution in SiO2 thin film growth process

A technology of microstructure evolution and thin film growth, applied in the field of reverse research, can solve the problems of cost and long research cycle

Inactive Publication Date: 2015-02-18
THE 3RD ACAD 8358TH RES INST OF CASC
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In summary, how to evaluate SiO 2 The performance evolution law of the film during the growth process, using the traditional layered plating evaluation method has the disadvantages of ...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Research method on microstructure evolution in SiO2 thin film growth process
  • Research method on microstructure evolution in SiO2 thin film growth process
  • Research method on microstructure evolution in SiO2 thin film growth process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0060] SiO prepared by ion beam sputtering in this example 2 Taking a thin film as an example, the above method is used to evaluate the evolution law of the Si-O-Si bond angle during the growth process, and to determine the development trend of its short-range order structure.

[0061] 1) The thin film sample substrate uses an ultra-smooth Si sheet (surface roughness ~0.3nm, Φ40×0.32mm), and SiO is prepared by ion beam sputtering deposition method. 2 film. The specific process parameters are as follows: ion beam sputtering deposition using SiO 2 Target material (purity ≥ 99.99%), background vacuum degree is better than 1.0×10-3Pa, substrate temperature is room temperature, ion beam voltage is 1250V, ion beam current is 500mA, oxygen flow rate is 30sccm, deposition time is 3600s, thin film physics The thickness is about 850nm.

[0062] 2) The method of chemical corrosion on SiO 2 Thin film layered corrosion, using hydrofluoric acid + ammonia water + glycerol + ethylene glyc...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention belongs to the field of reverse research on the performance evolution in a thin film growth process, and particularly relates to a research method on microstructure evolution in an SiO2 thin film growth process. The research method can be used for evaluating an evolution rule of a microstructure in the SiO2 thin film growth process. According to the research method, layered corrosion is performed on an SiO2 thin film by adopting a chemical solution corrosion method, so that infrared dielectric constant testing is performed on the corroded SiO2 thin film respectively, and a short-range ordered structure of the SiO2 thin films with different thicknesses can be evaluated; the research method has an important significance on deep understanding of the microstructure in the thin film growth process; a reverse research method is provided for the research on the performance evolution rule of the growth process of a thin film material. According to the method, the defects of long period, high cost and the like of a conventional layered preparation method are overcome, and a novel method is provided for the reverse research on the growth process of the thin film.

Description

technical field [0001] The invention belongs to the field of reverse research on the performance evolution of the film growth process, and specifically relates to a SiO 2 A method for the study of microstructural evolution during film growth, which can be used to evaluate SiO 2 Microstructural evolution rules during film growth. Background technique [0002] SiO 2 Thin film is one of the important low-refractive index materials for optical thin films, and is widely used in the near-ultraviolet to near-infrared band. SiO 2 Thin film preparation methods include electron beam evaporation, ion assist, ion beam sputtering, magnetron sputtering, sol-gel, atomic layer deposition, etc. The characteristics of different film forming methods are quite different, especially their microstructural characteristics. It has a strong correlation with the light, heat and force of the film, so for SiO 2 The structural evaluation of thin films is of great significance. [0003] Evaluation ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G06F19/00G01N1/32G01N33/00
Inventor 季一勤刘华松姜承慧刘丹丹姜玉刚王利栓赵馨
Owner THE 3RD ACAD 8358TH RES INST OF CASC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap