A kind of multilayer film Schottky diode hydrogen sensor core body and preparation method thereof
A Schottky diode and sensor core technology, applied in the field of hydrogen sensors, can solve the problems of high lower limit of hydrogen concentration and low sensitivity of hydrogen sensors
Active Publication Date: 2017-03-15
48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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[0005] The object of the present invention is to provide a multilayer film Schottky diode hydrogen sensor core and its preparation method to solve the problems of low hydrogen sensor sensitivity and high detection limit of hydrogen concentration in the prior art
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[0026] Such as figure 1 As shown, the multilayer film Schottky diode hydrogen sensor core includes a substrate 1 , a first dielectric layer 2 , a second dielectric layer 3 , and a hydrogen sensitive layer 4 . Among them, the substrate 1 is an N-type silicon wafer, and the surface of the N-type silicon wafer is provided with a first dielectric layer 2 made of a titanium dioxide film, and the surface of the first dielectric layer 2 is provided with a second dielectric layer 3 made of a poly Schiffer base film. The surface of the second dielectric layer 3 is provided with a palladium-chromium alloy thin film to form a hydrogen sensitive layer 4 .
[0027] The preparation method of the above-mentioned core includes the following steps in sequence: ultrasonically clean the phosphorous-doped N-type silicon substrate with a resistivity of 0.1-20 Ω·cm with acetone of analytical purity and absolute ethanol for 5 min; % HF solution to corrode the natural oxide layer on the surface of t...
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Abstract
The invention relates to the field of hydrogen sensors, and in particular relates to a multi-layer film Schottky diode hydrogen sensor core body and a preparation method thereof. The multi-layer film Schottky diode hydrogen sensor core body sequentially comprises a substrate, a first dielectric layer and a hydrogen sensitive layer, wherein a poly Schiff base thin film is additionally arranged between the first dielectric layer and the hydrogen sensitive layer as a second dielectric layer. The core body is prepared into a hydrogen sensor, the sensitivity of the multi-layer film Schottky diode hydrogen sensor core body is more than 56mV under the hydrogen concentration of 2000ppm, the detected lower limit of the hydrogen concentration is 5ppm, and the characteristics show that the multi-layer film Schottky diode hydrogen sensor core body disclosed by the invention has potential application values in the field of hydrogen sensing.
Description
technical field [0001] The invention relates to the field of hydrogen sensors, in particular to a multilayer film Schottky diode hydrogen sensor core and a preparation method thereof. Background technique [0002] As a clean energy with high combustion efficiency, hydrogen has been widely used in the booster systems of aerospace, vehicles and ships; at the same time, as an important reducing gas and carrier gas, hydrogen is widely used in chemical industry, electronics, Fields such as medicine also play an extremely important role. However, hydrogen is a flammable and explosive dangerous gas. When the content in the air is between 4-75%, it will explode when it encounters an open flame. The molecular diameter of hydrogen gas is very small, colorless, and odorless. It is easy to leak and difficult to detect during the process of production, storage, transportation and use, which brings a very large safety hazard and threatens the safety of people and property. Therefore, th...
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IPC IPC(8): G01N27/60
Inventor 陈浩谢贵久景涛曹勇全陈伟龚星曹勇飞易航
Owner 48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP