Electrostatic chuck and plasma processing equipment

Abstract

The invention provides an electrostatic chuck and plasma processing equipment. The electrostatic chuck comprises a chuck used for bearing a processed workpiece and a base, the chuck comprises a chuck body, an electrostatic electrode arranged in the chuck body and a heating unit, and the electrostatic electrode is connected with a direct-current power source and used for fixing the processed workpiece to the chuck in an electrostatic attraction mode. The heating unit is used for heating the processed workpiece. The base is arranged below the chuck body and used for supporting and fixing the chuck body. A heat insulation assembly is arranged between the chuck body and the base and comprises an expansion heat insulation ring and a cooling unit, the expansion heat insulation ring is a closed thin-wall structural member, and the upper end and the lower end of the expansion heat insulation ring are in sealing contact with the chuck body and the base. The cooling unit is used for cooling the expansion heat insulation ring. The electrostatic chuck can thoroughly solve the heat insulation problem of the chuck, and therefore the heating efficiency and heating uniformity of the electrostatic chuck can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor equipment manufacturing, in particular to an electrostatic chuck and plasma processing equipment. Background technique [0002] In the process of manufacturing integrated circuits (IC) and microelectromechanical systems (MEMS), especially in the process of implementing plasma etching (ETCH), physical vapor deposition (PVD), chemical vapor deposition (CVD), etc., often Electrostatic chucks are used to fix, support and heat processed workpieces such as wafers, provide DC bias voltage for wafers and control the temperature of the wafer surface. [0003] figure 1 It is a schematic diagram of the structure of a typical electrostatic chuck. Such as figure 1 As shown, the electrostatic chuck includes an insulating layer 1 , a heater 2 and an aluminum base 3 stacked in sequence from top to bottom. Among them, the insulating layer 1 adopts AL 2 o 3 or ALN and other ceramic materials, and a DC electrode l...

AI Technical Summary

Problems solved by technology

[0010] Since the expansion joint 140 cannot support the chuck body 110 alone, the chuck body 110 must be supported by the insulating ring 154. However, since a part of the heat generated by the heating element 116 will be conducted to the insulating ring 154, the heat loss of the heating element 16 will increase. thus reducing the heating efficiency of the electrostatic chuck

Moreover, since the insulating ring 154 is only in contact with the edge region of the bottom of the chuck body 110, the heat loss rate of the edge region of the chuck body 110 is greater than that of the center region, which makes the temperature of the chuck body 110 uneven, thereby Make the temperature of the wafer uneven, thereby reducing the quality of processing

Images