Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Method for producing multilayer structure, multilayer structure and electronic device

A technology of lamination structure and manufacturing method, which is applied to lamination devices, lamination, electronic equipment, etc., can solve problems such as prolonged time and temperature rise, and achieve the effect of inhibiting peeling

Inactive Publication Date: 2015-03-04
SONY CORP
View PDF1 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, thermosetting resins have the following problems: (1) Curing requires prolonged temperature rise, and (2) Large-scale equipment is required because a solvent drying process is usually required

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for producing multilayer structure, multilayer structure and electronic device
  • Method for producing multilayer structure, multilayer structure and electronic device
  • Method for producing multilayer structure, multilayer structure and electronic device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0074] 1. First Embodiment (Laminated Structure and Manufacturing Method Thereof)

[0075] 2. Second Embodiment (Laminated Structure and Manufacturing Method Thereof)

no. 3 approach

[0076] 3. Third Embodiment (Laminated Structure and Manufacturing Method Thereof)

no. 4 approach

[0077] 4. Fourth Embodiment (Laminated Structure and Manufacturing Method Thereof)

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
widthaaaaaaaaaa
Login to View More

Abstract

A multilayer structure is produced by bonding one or more graphene layers (12), which are formed on a first substrate (11), and a second substrate (13) with each other by a roll-to-roll method by means of an adhesive layer (14) that is formed of a delayed ultraviolet-curable resin. A metal foil is used as the first substrate (11), while a transparent substrate is used as the second substrate (13).

Description

technical field [0001] The present disclosure relates to a manufacturing method of a laminated structure, a laminated structure, and an electronic device, and is preferably applied to, for example, transparent conductive films used in displays and touch panels, and various electronic devices respectively including the transparent conductive films. Background technique [0002] Graphene including carbon atoms of single-layer graphite is expected as a transparent conductive material or a wiring material due to its high conductivity. In particular, graphene synthesized by a thermal CVD method attracts attention because a film can be formed over a large area while controlling the number of layers. [0003] In the synthesis method of graphene by thermal CVD method, graphene is formed on a metal catalyst substrate, usually on a copper foil. Therefore, the formed graphene needs to be transferred from the metal catalyst substrate to the desired substrate. [0004] As a transfer me...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B32B37/20B32B7/04B32B9/00G06F3/041H01B5/14H01B13/00
CPCB32B9/00B32B37/12G06F3/041B32B2311/00B32B2307/412B32B2313/04B32B7/04B32B37/20B32B2457/20B32B2457/208B32B9/007B32B9/045B32B15/08B32B15/20B32B27/16B32B2255/10Y10T428/30B32B7/12B32B2255/20B32B2255/28B32B2307/202B32B2457/00B32B37/0053B32B37/025B32B38/0008B32B38/10B32B2037/1253B32B2038/0076B32B2250/02B32B2310/0831H01B1/18
Inventor 清水圭辅木村望
Owner SONY CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products