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Semiconductor mesa and manufacturing method thereof

A semiconductor and mesa technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as the impact of semiconductor device performance, achieve shielding electric field effects, improve reliability, and improve blocking resistance. The effect of pressure

Active Publication Date: 2017-12-26
ZHUZHOU CRRC TIMES SEMICON CO LTD
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

The protective rubber is negatively charged, which will affect the electric field at the interface of the PN junction extending to the semiconductor mesa, thereby affecting the performance of the semiconductor device.

Method used

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  • Semiconductor mesa and manufacturing method thereof
  • Semiconductor mesa and manufacturing method thereof
  • Semiconductor mesa and manufacturing method thereof

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Embodiment Construction

[0034] The implementation of the present invention will be described in detail below in conjunction with the accompanying drawings and examples, so as to fully understand and implement the process of how to apply technical means to solve technical problems and achieve technical effects in the present invention. It should be noted that, as long as there is no conflict, each embodiment and each feature in each embodiment of the present invention can be combined with each other, and the formed technical solutions are all within the protection scope of the present invention.

[0035] figure 1 Shown is a cross-sectional view of a prior art semiconductor mesa. Here, a semiconductor diode is taken as an example to illustrate the passivation structure at the interface of the PN junction of the semiconductor device in the prior art. Such as figure 1 As shown, the upper part is the P+ type region, corresponding to the anode emitter 1; the lower part is the N type region, corresponding...

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Abstract

The invention discloses a semiconductor mesa, wherein the PN junction interface extends to the surface of the semiconductor mesa, which is applied in the field of semiconductor technology, and the semiconductor mesa comprises: a first passivation film and a second passivation film covered on the first passivation film A passivation layer formed by two passivation films; a protective layer formed on the passivation layer, the present invention also discloses the process steps of making the semiconductor mesa, including: depositing a diamond-like film on the semiconductor mesa to form the first passivation film, coating an organic film on the first passivation film to form a second passivation film, the first passivation film and the second passivation film form a passivation layer; pouring protective rubber on the passivation layer to form a protective layer . The present invention adopts a double-layer passivation film to form a passivation layer, which can realize good contact performance between the passivation layer and the semiconductor table, improve reliability, and can also shield the electric field influence of the negatively charged protective layer on the semiconductor table, and improve the resistance of the semiconductor device. breaking pressure.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor mesa and a manufacturing method thereof. Background technique [0002] The surface of high-power semiconductor devices, especially the area where the interface of the PN junction extends to the surface, is easily polluted by ions, chemicals, water, etc. If the surface of the semiconductor device is polluted, the leakage current of the device will increase, the blocking voltage will decrease, the reliability of the device will be reduced, and even the device will fail. Therefore, it is necessary to treat the surface of the semiconductor device, especially the PN junction region on the surface. [0003] The edge of a semiconductor device is usually provided with a mesa to which the interface of the PN junction in the device extends. Countertop design includes surface passivation of the countertop. Surface passivation refers to covering one or more layers o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/29H01L21/56
Inventor 张弦陈芳林颜骥邱凯兵高建宁王政英
Owner ZHUZHOU CRRC TIMES SEMICON CO LTD