Semiconductor mesa and manufacturing method thereof
A semiconductor and mesa technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as the impact of semiconductor device performance, achieve shielding electric field effects, improve reliability, and improve blocking resistance. The effect of pressure
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[0034] The implementation of the present invention will be described in detail below in conjunction with the accompanying drawings and examples, so as to fully understand and implement the process of how to apply technical means to solve technical problems and achieve technical effects in the present invention. It should be noted that, as long as there is no conflict, each embodiment and each feature in each embodiment of the present invention can be combined with each other, and the formed technical solutions are all within the protection scope of the present invention.
[0035] figure 1 Shown is a cross-sectional view of a prior art semiconductor mesa. Here, a semiconductor diode is taken as an example to illustrate the passivation structure at the interface of the PN junction of the semiconductor device in the prior art. Such as figure 1 As shown, the upper part is the P+ type region, corresponding to the anode emitter 1; the lower part is the N type region, corresponding...
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