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Slurry composition for chemical and mechanical polishing

A technology of composition and slurry, applied in the direction of polishing composition containing abrasives, other chemical processes, chemical instruments and methods, etc.

Inactive Publication Date: 2015-03-18
LTCAM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The adoption of lithographic techniques with shorter wavelengths has caused depth of field (DOF) problems

Method used

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  • Slurry composition for chemical and mechanical polishing
  • Slurry composition for chemical and mechanical polishing
  • Slurry composition for chemical and mechanical polishing

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0025] Will contain 1wt% colloidal silica abrasive, 0.1wt% isothiazole dispersion stabilizer, 0.5wt% benzenecarboxylic acid (1,2,3,4-butane tetracarboxylic acid) corrosion inhibitor, 12wt% A slurry of amino acid chelating agent, 1 wt% complexing agent consisting of acrylamide and aminomethylpropanol, and 1 wt% oxidizing agent was diluted with diluent (DI water), and evaluated under the following conditions.

[0026] Table 1

[0027]

[0028]

example 2

[0030] Will contain 1wt% of colloidal silica abrasive, 0.1wt% of isothiazole dispersion stabilizer, 1wt% of 0.4wt% benzenecarboxylic acid (1,2,3,4-butane tetracarboxylic acid) and 0.6wt% % benzotriazole (6-chloro-1-methoxy-benzotriazole) corrosion inhibitor, 12wt% amino acid chelating agent, 1wt% complex composed of acrylamide and aminomethylpropanol A slurry of the mixture and 1 wt% of the oxidizing agent was diluted with a diluent (DI water), and evaluated under the following conditions. Compare the results with those of Example 1.

[0031] Table 2

[0032]

[0033]

[0034] As shown in the above results, it can be seen that the slurry composition of Example 1 exhibits better capabilities than Example 2 in terms of Cu removal rate, selectivity (Cu:Ta) and dishing. It can be seen that benzenecarboxylic acid used alone provides a better effect than the benzotriazole corrosion inhibitors commonly used in the art, and that benzenecarboxylic acid (1,2,3,4-butanetetracarbox...

example 3

[0036] A slurry was prepared in the same manner as in Example 2, except that 1 wt% was made of 0.4 wt% benzenecarboxylic acid (1,2,3,4-butane tetracarboxylic acid) and 0.6 wt% benzotriazole (6-chloro -1-methoxy-benzotriazole) corrosion inhibitor consisting of 2,2'-[(1H-benzotriazol-1-ylmethyl)imino]bisethanol was replaced as benzotriazole Component. The slurries were evaluated under the following conditions.

[0037] table 3

[0038]

[0039]

[0040] As can be seen from the above results, Example 2 exhibited better capabilities than Example 3 in terms of Cu removal rate, selectivity (Cu:Ta) and dishing.

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Abstract

The invention discloses a slurry composition including 0.1wt%-10wt% of abradant, 0.01 wt%-1wt% of isothiazole dispersion stabilizer, 0.01wt%-1wt% of benzene carboxylic acid corrosion inhibitor, 0.01wt%-15wt% of amino acid chelate agent, and 0.01wt%-1wt% of complexing agent including acrylamide and aminomethyl propanol.Compared with slurry special for polishing, the slurry composition can reduce the recess and erosion under high-speed CMP technology, and meanwhile can maintain stable Cu removing rate and make the selective removing rate between Cu and Ta maximum, and therefore no flaws may be left on a surface to be polished.

Description

technical field [0001] The present invention relates to slurry compositions for chemical mechanical polishing (CMP). More specifically, the present invention relates to a slurry composition for CMP comprising abrasives, dispersants, stabilizers, corrosion inhibitors, chelating agents, and oxidizing agents capable of denting and erosion under high-speed CMP processes The phenomenon is minimized while ensuring a stable Cu removal rate and a maximized selectivity between Cu and Ta, thereby not causing defects on the surface to be polished. Background technique [0002] With the development of semiconductor technology, the line width is continuously miniaturized and thus the importance of planarization increases. In particular, as semiconductor integration has increased, multilevel interconnect structures have been introduced. The adoption of lithographic techniques with shorter wavelengths has caused depth of field (DOF) issues. To effectively solve such problems, the usabil...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C23F3/04
CPCC09G1/02C23F3/04B24B37/044C09K3/1409
Inventor 李锡浩宋定桓全成植
Owner LTCAM
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