Manufacturing method of reverse conduction FS IGBT (field stop insulated gate bipolar transistor)

Abstract

The invention discloses a manufacturing method of a reverse conduction FS IGBT (field stop insulated gate bipolar transistor). The manufacturing method comprises the following steps of providing a first doping type of silicon substrate, and performing photoetching and etching to form a groove structure at one surface of the substrate; filling a second doping type of silicon into the groove, and forming a back PN alternating structure at the surface of the substrate; providing an N type silicon wafer, preparing an N+ layer at the surface of the N type silicon wafer, and diffusing to obtain a field stop layer; bonding the substrate and the N type silicon wafer together; adopting an IGBT face technology to prepare an IGBT face structure in and on a drift area; thinning the substrate of the bonding silicon wafer after the face technology to the back PN alternating structure; forming a back metal electrode at the surface of the back PN alternating structure. The manufacturing method has the advantages that the back PN alternating structure is directly manufactured on the substrate before the face technology; an FS layer is prepared by firstly injecting or scattering the N type silicon wafer and then diffusing at high temperature, and the N type silicon wafer is bonded with the substrate silicon wafer together to obtain a wafer which has the same thickness as the conventional circulating wafer, so the special wafer circulating equipment is not needed, and the cost is reduced.

Description

technical field [0001] The invention relates to a manufacturing method of a semiconductor device, in particular to a manufacturing method of a reverse conduction field stop type insulated gate bipolar transistor. Background technique [0002] Insulated gate bipolar transistors (IGBTs) are generally used in the form of antiparallel freewheeling diodes. However, this method wastes the packaging area on the one hand, and on the other hand, due to the existence of parasitic effects such as parasitic inductance, the parallel connection increases additional power consumption. Therefore, the technology of integrating IGBT and diode on the same chip has been paid more and more attention. [0003] Reverse conduction field stop (Field Stop, FS) IGBT is a switching device commonly used in electrical equipment such as induction cookers. Due to the improvement of the channel of unbalanced carriers, the tail current is optimized, and the device does not need to The freewheeling diode is...

AI Technical Summary

Problems solved by technology

[0005] Based on this, in order to solve the problem that the traditional reverse-conducting field-stop insulated gate bipolar transistor requires special sheet circulation and processing equipment, which leads to the need to purchase additional production equipment and increase the production cost, it is necessary to provide a Preparation method of reverse conduction field stop type insulated gate bipolar transistor which is compatible with some conventional production equipment and does not require sheet circulation equipment

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