Efficient broadband terahertz wave absorption device based on highly-doped silicon materials
A highly doped, silicon material technology, applied in the field of high-efficiency broadband terahertz wave absorbers, can solve the problems of large absolute value of the real part of the dielectric constant and cannot directly support surface plasmons, and achieve high-efficiency broadband absorption and processing methods. Diversified, simple and compact effects
Inactive Publication Date: 2015-03-25
CHINA JILIANG UNIV
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However, in the terahertz band, since the absolute value of the real part of the dielectric constant of metals, which are commonly used surface plasmon materials, is very large, they cannot directly support surface plasmons, which limits the application of surface plasmons in terahertz wave absorption.
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[0020] The following are specific embodiments of the present invention. The technical solutions of the present invention will be further described in conjunction with the accompanying drawings, but the present invention is not limited to these embodiments.
[0021] refer to figure 1 In this embodiment, a layer of silicon dioxide intermediate layer 2 with a thickness of t is superimposed on a highly doped silicon substrate layer 1 with a period of P, and a strip top layer 3 with a broadband of W and a thickness of h is superimposed on the upper layer to form three-layer structure. The terahertz beam is vertically incident on the structure. Since the substrate is opaque to the terahertz radiation, it can be seen that the absorptivity of the structure can be obtained directly from the reflection spectrum. Such a highly doped silicon-silicon dioxide-highly doped The silicon three-layer structure is similar to the metal-dielectric-metal structure in the optical band. At this time...
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The invention discloses an efficient broadband terahertz wave absorption device based on highly-doped silicon materials. The wave absorption device is characterized in that a layer of highly-doped silicon materials serve as a substrate, a highly-doped silicon stripe is arranged on the top layer, the middle is wrapped by a layer of silicon dioxide, and therefore a three-layer structure is formed. The wave absorption device is based on the silicon materials, surface plasma materials are achieved on a terahertz wave band through high doping; a reasonable resonance structure is designed through simulation calculation with the finite element method; efficient broadband absorption on terahertz waves is accordingly achieved by observing reflectance spectra of the structure to incidence terahertz signals. The efficient broadband terahertz wave absorption device has the advantages of being simple in structure, convenient to machine, high in absorption efficiency, relatively wider in bandwidth and the like; the efficient broadband terahertz wave absorption device can widely meet the requirements of application in the terahertz absorption aspect.
Description
technical field [0001] The invention relates to a high-efficiency broadband terahertz wave absorber based on highly doped silicon as a surface plasmon material, and belongs to the application field of highly doped silicon in the terahertz wave band. Background technique [0002] Terahertz wave is located between microwave and infrared light in the electromagnetic spectrum, and its wavelength is usually from 30um to 3mm. Due to its wide potential applications in various fields, including time-domain spectroscopy, non-destructive sensing, biological imaging, communication, etc., in recent years It has been paid attention to and researched by people all the time. However, with the rapid development of the application of terahertz technology, it is necessary to avoid the influence of terahertz radiation in some special cases. Although most media are more or less lossy to terahertz radiation, none of them can completely absorb terahertz waves in a short distance. Therefore, the...
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IPC IPC(8): H01Q17/00
Inventor 韩张华张裕生
Owner CHINA JILIANG UNIV