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Method used for preparing aluminium-doped zinc oxide thin film via electroless deposition

An aluminum-doped zinc oxide, electroless deposition technology, applied in the direction of liquid chemical plating, metal material coating process, coating, etc., can solve the problems of flexible substrates that are not resistant to high temperature and do not have electrical conductivity, etc. High temperature resistance, low cost and stable performance

Active Publication Date: 2015-04-08
GUANGXI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Aiming at the above-mentioned deficiencies in the prior art, the present invention proposes a preparation method for electroless deposition of aluminum-doped zinc oxide film on a non-conductive flexible substrate, which can not only solve the weakness of the flexible substrate not being resistant to high temperature, but also solve the problem of There is no problem of electrical conductivity, and the preparation process of this method is simple, no vacuum equipment is needed, the cost is low, it is suitable for large-scale industrial production, and can be widely used in the field of optoelectronics

Method used

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  • Method used for preparing aluminium-doped zinc oxide thin film via electroless deposition

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Embodiment 1

[0020] The method for preparing the electroless deposition aluminum-doped zinc oxide thin film of the present invention comprises the following steps:

[0021] (1) Place the non-conductive flexible substrate in an acetone solution for ultrasonic cleaning for 20 minutes, then rinse it with deionized water, and dry it to obtain a clean flexible substrate;

[0022] (2) At room temperature, sensitize the clean flexible substrate by immersing it in the sensitizing solution for 45 minutes to obtain a sensitized flexible substrate; the sensitizing solution is composed of SnCl 2 and HCl solution, SnCl in the sensitization solution 2 The concentration of HCl is 20g / l, and the concentration of HCl is 0.12mol / l. The sensitization treatment is to make the non-conductive flexible substrate surface absorb sensitization particles Sn 2+ ;

[0023] (3) At room temperature, immerse the sensitized flexible substrate in the activation solution for 45 minutes for activation treatment to obtain a...

Embodiment 2

[0026] Another example of the method for preparing the electroless deposition aluminum-doped zinc oxide thin film of the present invention comprises the following steps:

[0027] (1) Place the non-conductive flexible substrate in an acetone solution for ultrasonic cleaning for 15 minutes, then rinse it with deionized water, and dry it to obtain a clean flexible substrate;

[0028] (2) At room temperature, sensitize the clean flexible substrate by immersing it in the sensitizing solution for 60 minutes to obtain a sensitized flexible substrate; the sensitizing solution is composed of SnCl 2 and HCl solution, SnCl in the sensitization solution 2 The concentration of HCl is 40g / l, the concentration of HCl is 0.24mol / l, and the described sensitization treatment is to make the non-conductive flexible substrate surface adsorb the sensitized particles Sn 2+ ;

[0029] (3) At room temperature, immerse the sensitized flexible substrate in the activation solution for 60 minutes for ac...

Embodiment 3

[0032] Another example of the method for preparing the electroless deposition aluminum-doped zinc oxide thin film of the present invention comprises the following steps:

[0033] (1) Place the non-conductive flexible substrate in an acetone solution for ultrasonic cleaning for 10 minutes, then rinse it with deionized water, and dry it to obtain a clean flexible substrate;

[0034] (2) At room temperature, sensitize the clean flexible substrate by immersing it in the sensitizing solution for 30 minutes to obtain a sensitized flexible substrate; the sensitizing solution is composed of SnCl 2 and HCl solution, SnCl in the sensitization solution 2The concentration of HCl is 60g / l, and the concentration of HCl is 0.36mol / l. The sensitization treatment is to make the non-conductive flexible substrate surface adsorb sensitization particles Sn 2+ ;

[0035] (3) At room temperature, immerse the sensitized flexible substrate in the activation solution for 30 minutes for activation tre...

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Abstract

The invention discloses a method used for preparing aluminium-doped zinc oxide thin film via electroless deposition. According to the method, a non-conducting flexible substrate is immersed into a sensitizing solution and an active solution respectively so as to realize surface activation of the non-conducting flexible substrate; the activated non-conducting flexible substrate is immersed into a growth solution containing Zn(NO3)2, Al(NO3)3, and dimethylamine-borane so as to realize deposition of the aluminium-doped zinc oxide thin film on the flexible substrate. The method is simple; equipment is simple; high temperature or high pressure environment is not needed; and the method is suitable for large scale industrial production, and can be widely used for photoelectric field.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic devices, and in particular relates to a method for preparing an electroless deposition aluminum-doped zinc oxide thin film. Background technique [0002] With the development of science and technology and the continuous improvement of people's living standards, transparent conductive films are more and more widely used in people's daily life, such as liquid crystal displays, solar cells, and building curtain wall glass. The most widely used transparent conductive film today is mainly indium tin oxide (ITO) film, but the indium resource in the ITO film is very limited in the earth and expensive, which can no longer meet the current demand. Aluminum-doped zinc oxide (AZO) film is a new type of transparent conductive oxide film. Compared with indium tin oxide film, it has better light guiding performance, rich and cheap raw materials, non-toxic, and good stability. It is the most...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C18/16C23C18/28
CPCC23C18/1641C23C18/2086
Inventor 黄瀛沈晓明何欢符跃春韦小凤覃嘉媛
Owner GUANGXI UNIV
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