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Method for doping and transferring graphene

A transfer method and graphene technology, applied in the direction of graphene, nano-carbon, etc., can solve the problems of easy volatility, increased square resistance of graphene, weak interaction between small molecule dopants and graphene, etc., to simplify the production process, The effect of eliminating the doping step and improving the doping stability

Active Publication Date: 2015-04-22
CHONGQING GRAPHENE TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The interaction between small molecule dopants and graphene is weak and easy to volatilize, which leads to the continuous increase of the square resistance of graphene during the placement process, which seriously limits the practical application of graphene

Method used

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  • Method for doping and transferring graphene
  • Method for doping and transferring graphene

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] This embodiment includes the following steps:

[0027] Step 1, dissolving polyacrylonitrile (PAN) in dimethylformamide, and coating it on the surface of growing graphene 3 by roll coating;

[0028] Step 2, pressing the graphene coated with polyacrylonitrile and the PET substrate to form a composite structure of PET / PAN / graphene / growth substrate;

[0029] Step 3, performing pressurized vacuum treatment on the composite structure, the pressure is 0.5MPa, the vacuum pressure is 0.1Pa, and the time for pressurized vacuum treatment is 5hr;

[0030] Step 4, heat-treating the composite structure after the pressurized vacuum treatment, the temperature of the heat treatment is 50° C., and the heat treatment time is 400 minutes;

[0031] Step 5, separating the heat-treated composite structure to separate the growth substrate 4 in the composite structure.

Embodiment 2

[0033] This embodiment includes the following steps:

[0034] Step 1, ethanol dissolves nitrocellulose, and coats the surface of growing graphene 3;

[0035] Step 2, press and attach the obtained graphene 3 coated with nitrocellulose 2 on the surface of the target substrate PET1 to form a composite structure of PET / nitrocellulose / graphene / growth substrate;

[0036] Step 3, performing pressurized vacuum treatment on the composite structure, the pressure is 15MPa, the vacuum pressure is 200Pa, and the time for pressurized vacuum treatment is 0.5hr;

[0037] Step 4, heat-treating the composite structure after the pressurized vacuum treatment, the temperature of the heat treatment is 50° C., and the heat treatment time is 400 minutes;

[0038] Step 5, separating the heat-treated composite structure to separate the growth substrate 4 in the composite structure.

Embodiment 3

[0040] This embodiment includes the following steps:

[0041] Step 1, dissolving ethyl cyanoacrylate and methyl methacrylate copolymer in ethyl acetate, coating on the surface of growing graphene 3;

[0042] Step 2, the obtained graphene 3 coated with ethyl cyanoacrylate and methyl methacrylate copolymer 2 is pressed and attached on the surface of the target substrate PET1 to form PET / ethyl cyanoacrylate copolymer / graphite Composite structure of composite structure of ene / growth substrate;

[0043] Step 3, performing pressurized vacuum treatment on the composite structure, the pressure is 0.5MPa, the vacuum pressure is 200Pa, and the time for pressurized vacuum treatment is 3hr;

[0044] Step 4, heat-treating the composite structure after the pressurized vacuum treatment, the temperature of the heat treatment is 50° C., and the heat treatment time is 400 minutes;

[0045] Step 5, separating the heat-treated composite structure to separate the growth substrate 4 in the compos...

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Abstract

The invention relates to the technical field of graphene production, and particularly relates to a method for doping and transferring graphene. The method comprises the following steps: 1, coating a graphene growing surface with a polymer doping transferring medium; 2, pressing and adhering the graphene coated with the doping transferring medium on the surface of a target substrate to form a composite structure formed by the target substrate, the doping transferring medium, the graphene and the growing substrate sequentially; 3, carrying out pressure-vacuum treatment on the composite structure; 4, heating the composite structure which is subjected to the pressure-vacuum treatment; and 5, separating the heated composite structure to remove the growing substrate in the composite structure. The method has the beneficial effects that the polymer material with a doping effect is selected to serve as a graphene transferring material and a doping material at the same time, the doping stability is improved by utilizing the stability characteristics of polymer, a subsequent graphene doping step is omitted, and the graphene production process is simplified.

Description

technical field [0001] The invention relates to the technical field of graphene production, in particular to a graphene doping transfer method. Background technique [0002] Graphene is a two-dimensional nanomaterial discovered in recent years, which has many excellent properties. Among them, the extremely high transmittance and ultra-high carrier mobility make it a new transparent conductive material that has attracted the attention of the industry. [0003] The existing mature method for large-scale preparation of graphene is chemical vapor deposition (CVD). Graphene prepared by CVD generally uses opaque metals as the growth substrate, such as copper foil, nickel foil, etc. To be used as a transparent conductive material, graphene must be transferred to a transparent substrate and doped to reduce the square resistance. Most of the existing doping methods use small molecules as dopants, such as ethylenediamine, nitric acid, chloroauric acid, etc., to physically adsorb on...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04C01B32/184
Inventor 姜浩黄德萍朱鹏李占成高翾张永娜史浩飞杜春雷
Owner CHONGQING GRAPHENE TECH
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