Preparation method of CMOS phase inverter based on GaOx-NMOS/GaN-PMOS

Abstract

The invention discloses a preparation method of a CMOS inverter of GaOx-NMOS / GaN-PMOS. The preparation method comprises the following steps: growing a carbon-doped GaN buffer layer on a Si substrate, blocking a region on one side of the carbon-doped GaN buffer layer by using photoresist, epitaxially growing Si-doped GaN on the other side to form a p-MOS channel layer, removing the photoresist on the other side, blocking the surface of the p-MOS channel layer, etching a partial region of the n-MOS channel layer to the carbon-doped GaN buffer layer, and forming a p-MOS channel layer on the surface of the n-MOS channel layer; growing GaN on the carbon-doped GaN buffer layer exposed after etching by using SiO2 as a growth mask to form a p-MOS channel layer, and epitaxially growing GaOx on the surface of which the photoresist is removed to form an n-MOS channel layer; performing vertical photoetching at critical positions of the n-MOS channel layer and the p-MOS channel layer, and growing diamond in a formed isolation region to form a barrier layer; blocking by using photoresist, and respectively injecting Si and Mg into the surfaces of the n-MOS channel layer and the p-MOS channel layer to form an n region and a p region; and depositing a metal film and a dielectric layer on the surface of the device, stripping, annealing, obtaining a drain electrode and a source electrode in two end regions of the n-MOS channel layer and the p-MOS channel layer in the barrier layer region, and forming grid electrodes in the n-MOS channel layer and the p-MOS channel layer.

Description

technical field [0001] The embodiments of the present invention relate to the technical field of materials, especially a GaO-based x -The preparation method of the CMOS inverter of NMOS / GaN-PMOS. Background technique [0002] In recent years, GaN and Ga 2 O 3 Identified as one of the most important semiconductors for power applications, they all have relatively large band gaps and breakdown electric fields, enabling high voltage, high current, and stable device operation. Inverters with GaN / AlGaN heterojunctions have attracted great attention and are widely used because of their excellent performance. The main features of this type of inverter are: high switching speed, small parasitic inductance; High pressure and other places. [0003] However, the existing inverters have high power consumption, complex fabrication processes, complicated circuits, poor heat dissipation, and the maximum on-current density is limited to several tens of mA / mm. The size of the device is re...

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Problems solved by technology

[0003] However, the existing inverters have high power consumption, complex manufacturing process, complex circuits, poor heat dissipation, and the maximum on-state current density is limited to tens of mA / mm. The size of the device is relatively large, and the production process of the device usually requires plasma Body etching will have a relatively large impact on device performance

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