Preparation method of CMOS phase inverter based on GaOx-PMOS/GaN-NMOS

Abstract

The preparation method comprises the following steps: growing a carbon-doped or silicon-doped GaN buffer layer on a single crystal Si substrate or a GaN substrate, blocking a region on one side of the carbon-doped GaN buffer layer by using photoresist, epitaxially growing Mg-doped GaN on the other side to form an n-MOS channel layer, removing the photoresist on one side, blocking the surface of the n-MOS channel layer, and forming an n-MOS channel layer on the surface of the n-MOS channel layer; epitaxial growth of GaOx is carried out on the surface of which the photoresist is removed so as to form a p-MOS channel layer; performing vertical photoetching at critical positions of the n-MOS channel layer and the p-MOS channel layer, and growing a high-thermal-conductivity substance in a formed isolation region to form a barrier layer; photoresist is used for blocking, Si is injected into the two ends of the surface of the n-MOS channel layer through ions to form an n region, and Mg is injected into the two ends of the surface of the p-MOS channel layer through ions to form a p region; etching a part of the insulating layer in two end regions of the n-MOS channel layer and the p-MOS channel layer and in a barrier layer region, depositing a metal film, stripping and annealing to respectively obtain a source electrode and a drain electrode, and stripping and annealing on the insulating layer in the regions of the n-MOS channel layer and the p-MOS channel layer to form a grid electrode.

Description

technical field [0001] The embodiments of the present invention relate to the technical field of materials, and in particular, to a preparation method of a GaOx-PMOS / GaN-NMOS-based CMOS inverter. Background technique [0002] In recent years, GaN and Ga 2 O 3 Identified as one of the most important semiconductors for power applications, they all have relatively large band gaps and breakdown electric fields, enabling high voltage, high current, and stable device operation. Inverters with GaN / AlGaN heterojunctions have attracted great attention and are widely used because of their excellent performance. The main features of this type of inverter are: high switching speed, small parasitic inductance; High pressure and other places. [0003] However, the existing inverters have high power consumption, complex fabrication processes, complicated circuits, poor heat dissipation, and the maximum on-current density is limited to several tens of mA / mm. The size of the device is rel...

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Problems solved by technology

[0003] However, the existing inverters have high power consumption, complex manufacturing process, complex circuits, poor heat dissipation, and the maximum on-state current density is limited to tens of mA / mm. The size of the device is relatively large, and the production process of the device usually requires plasma Body etching will have a relatively large impact on device performance

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