LED substrate structure and manufacturing method thereof
A technology of a substrate structure and a manufacturing method, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of low light output efficiency of flip-chip LED chips, and achieve the effects of improving axial luminous brightness, improving luminous brightness, and simple process.
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Embodiment 1
[0055] Please refer to Figure 2 to Figure 9 , which is a schematic diagram of a device structure formed in the method for manufacturing an LED substrate structure according to Embodiment 1 of the present invention.
[0056] Such as figure 2 As shown, a substrate 20 is provided, preferably, the substrate 20 is a sapphire substrate.
[0057] Next, a plurality of grooves are formed in the substrate 20, specifically, please refer to Figure 3 ~ Figure 5 .
[0058] First, if image 3 As shown, a mask layer 21 is formed on the substrate 20 . Preferably, the material of the mask layer 21 is at least one of silicon dioxide, silicon nitride and silicon oxynitride. In the embodiment of the present application, the mask layer 21 may be formed by an evaporation process, a sputtering process, a PECVD process, or an LPCVD process.
[0059] Next, if Figure 4 As shown, a plurality of openings 22 are formed in the mask layer 21 to expose part of the substrate 20 . Here, a part of th...
Embodiment 2
[0072] The difference between the second embodiment and the first embodiment is that the shape of the groove is triangular, that is, the shape of the first GaN structure is triangular. Specifically, please refer to Figure 10 ~ Figure 17 , which is a schematic diagram of the device structure formed in the method for manufacturing the LED substrate structure according to the second embodiment of the present invention.
[0073] Such as Figure 10 As shown, a substrate 30 is provided, preferably, the substrate 30 is a sapphire substrate.
[0074] Next, a plurality of grooves are formed in the substrate 30, specifically, please refer to Figure 11 ~ Figure 13 .
[0075] First, if Figure 11 As shown, a mask layer 31 is formed on the substrate 30 . Preferably, the material of the mask layer 31 is at least one of silicon dioxide, silicon nitride and silicon oxynitride. In the embodiment of the present application, the mask layer 31 may be formed by an evaporation process, a sp...
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