Copper silicon alloy sputtering target material and copper silicon alloy recording layer

A technology for copper-silicon alloy and recording layer, which is applied in the fields of copper-silicon alloy sputtering targets and copper-silicon alloy recording layers, can solve the problems that copper metal is prone to spontaneous reaction and oxidation, decrease, poor recording quality, etc. Effects of spontaneous reaction and oxidation, improved stability, and improved recording quality

Inactive Publication Date: 2015-04-29
SOLAR APPLIED MATERIALS TECHNOLOGY CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the phase transition temperature of the copper-silicon alloy / amorphous silicon dual recording layer is lower than 150°C, the copper metal is prone to spontaneous reaction and oxidation, which reduces the real-time reflectivity of this write-once Blu-ray disc. Intensity, resulting in write-once Blu-ray discs with dual recording layers of copper-silicon alloy / amorphous silicon often suffer from poor recording quality

Method used

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  • Copper silicon alloy sputtering target material and copper silicon alloy recording layer
  • Copper silicon alloy sputtering target material and copper silicon alloy recording layer
  • Copper silicon alloy sputtering target material and copper silicon alloy recording layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] Example 1: Cu 0.75 Si 0.08 Cr 0.17 Alloy sputtering target

[0048] Mix 1195.76 grams of copper powder, 56.37 grams of silicon powder, and 221.78 grams of chromium powder evenly, and continue hot pressing for 3 hours at a temperature of 600 ° C to 800 ° C and a pressure of 500 bar (bar) to obtain Cu 0.75 Si 0.08 Cr 0.17 Alloy sputtering target.

[0049] In the prepared copper-silicon alloy sputtering target, copper accounts for about 75 atomic percent of the overall copper-silicon alloy sputtering target; silicon accounts for about 8 atomic percent of the overall copper-silicon alloy sputtering target; chromium accounts for about 8 atomic percent of the overall copper-silicon alloy The sputtering target is about 17 atomic percent.

[0050] see figure 1 As shown, the Cu 0.75 Si 0.08 Cr 0.17 Scanning electron microscope image of the alloy sputtering target; figure 1 Among them, the light gray phase A (base phase) of Example 1 is a CuSi alloy; the dark gray phase ...

Embodiment 2

[0051] Example 2: Cu 0.75 Si 0.08 Ni 0.17 Alloy sputtering target

[0052] Mix 1213.20 grams of copper powder, 57.20 grams of silicon powder, and 254.06 grams of nickel powder evenly, and continue hot pressing for 3 hours at a temperature of 600 ° C to 800 ° C and a pressure of 500 bar to obtain Cu 0.75 Si 0.08 Ni 0.17 Alloy sputtering target.

[0053] In the prepared copper-silicon alloy sputtering target, copper accounts for about 75 atomic percent of the overall copper-silicon alloy sputtering target; silicon accounts for about 8 atomic percent of the overall copper-silicon alloy sputtering target; nickel accounts for about The sputtering target is about 17 atomic percent.

Embodiment 3

[0054] Example 3: Cu 0.75 Si 0.08 Ti 0.17 Alloy sputtering target

[0055] Mix 1110.59 grams of copper powder, 52.36 grams of silicon powder, and 189.75 grams of titanium powder evenly, and continue hot pressing for 3 hours at a temperature of 600 ° C to 800 ° C and a pressure of 500 bar to obtain Cu 0.75 Si 0.08 Ti 0.17 Alloy sputtering target.

[0056] In the prepared copper-silicon alloy sputtering target, copper accounts for about 75 atomic percent of the overall copper-silicon alloy sputtering target; silicon accounts for about 8 atomic percent of the overall copper-silicon alloy sputtering target; titanium accounts for about The sputtering target is about 17 atomic percent.

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Abstract

The invention provides a copper silicon alloy sputtering target material and a copper silicon alloy recording layer. The copper silicon alloy sputtering target material and the copper silicon alloy recording layer both consist of CuaSibMc alloy, wherein M is nickel, chromium, molybdenum or titanium, a is 0.55-0.93, b is 0.05-0.25, c is 0.02-0.20, and the sum of a, b and c is 1. The copper silicon alloy recording layer contains copper, silicon, nickel, chromium, molybdenum or titanium with appropriate contents, so that a phase transition temperature is higher than 150 DEG C and is lower than 500 DEG C, and when being applied to optical recording media, the copper silicon alloy recording layer can obtain favorable recording quality, favorable stability and higher programming speed.

Description

technical field [0001] The invention relates to a copper-silicon alloy sputtering target material and a copper-silicon alloy recording layer, in particular to a copper-silicon alloy sputtering target material and a copper-silicon alloy recording layer applied to optical recording media, and belongs to the technical field of optical recording media. Background technique [0002] Blu-ray Disc (Blu-ray Disc) uses blue laser light with a wavelength of 405 nanometers to read and write data. Because of its high capacity, it has been widely used to store high-capacity data and high-quality images. Audio and video files have become the next-generation optical disc specification. [0003] Generally, the layered structure of a write-once Blu-ray disc includes: a substrate, a reflective layer, a first dielectric layer, a double recording layer, a second dielectric layer and a protective layer. In the currently common write-once Blu-ray discs, the dual recording layers include copper / a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11B7/2433G11B7/26
CPCG11B7/2433G11B7/266
Inventor 麦宏全罗尚贤廖浩嘉黄品富林守贤
Owner SOLAR APPLIED MATERIALS TECHNOLOGY CORPORATION
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