Vacuum acquisition device for EUV irradiation material test system and corresponding test method

Abstract

The invention discloses a vacuum acquisition device for an EUV (Extreme Ultraviolet) irradiation material test system and a corresponding test method, wherein the test system comprises an EUV light source chamber (A), a collection mirror chamber (B) and a sample chamber (C); the vacuum acquisition device comprises a vacuum pump unit and a vacuum gauge unit that are respectively connected to each chamber, a first gate valve and a second gate valve (A3, B3) that are connected between the chambers, a first gas source and a second gas source (A4, B4) that are used for communicating the first gate valve and the second gate valve (A3, B3), as well as a gas analysis unit (C5) that is connected with the vacuum pump unit (B1) of the collection mirror chamber (B) by a valve. The invention can evacuate each part of the test system, effectively prevent pollutants from dispersing from the EUV light source chamber and the sample chamber to the collection mirror chamber, and can measure the gas components in the sample chamber and the partial pressure when the vacuum pressure is unmatched.

Description

technical field [0001] The invention belongs to the technical field of EUV (extreme ultraviolet) lithography, and in particular relates to a vacuum obtaining device suitable for an EUV irradiation material testing system and a corresponding testing method. Background technique [0002] Extreme ultraviolet (EUV) lithography technology is the next-generation lithography machine technology after 193nm immersion lithography technology. Since EUV radiation is strongly absorbed by almost all substances (including air), the EUV lithography machine system must placed in a vacuum environment. The materials used for the key components inside the EUV lithography system need to ensure that they do not have the harmful characteristics of EUV radiation damage under EUV light radiation and vacuum environment. And some materials will produce radiation damage corrosion under the action of EUV light radiation. [0003] In order to guide the selection of materials and processes in the design...

AI Technical Summary

Problems solved by technology

In order to ensure the normal and stable operation of the quadrupole mass spectrometer, the pressure of its working environment must be less than 0.01Pa; while the working pressure of the EUV lithography machine is generally a few Pa, so the work of the EUV irradiation material testing system that simulates the working environment of the EUV lithography machine The air pressure is generally several Pa; in this way, the quadrupole mass spectrometer cannot be used directly under the working air pressure of the EUV irradiated material testing system

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