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A Transient Voltage Suppressor Structure with Ultra-Deep Trench

A transient voltage suppression, deep trench technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., to achieve the effect of device size reduction

Active Publication Date: 2018-06-05
江苏应能微电子股份有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, traditional planar TVS cannot transfer kilowatt-level high-power TVS chips from traditional DO-214AA (SMB) and DO-214AB (SMC) packages to smaller packages such as DO-214AC (SMA) or other forms of packaging ( SOD package and DFN package) inside

Method used

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  • A Transient Voltage Suppressor Structure with Ultra-Deep Trench
  • A Transient Voltage Suppressor Structure with Ultra-Deep Trench
  • A Transient Voltage Suppressor Structure with Ultra-Deep Trench

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Embodiment Construction

[0030] The following will clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0031] Such as image 3 As shown, it discloses a schematic diagram of the device structure of the transient voltage suppressor structure with ultra-deep trenches of the present invention. Among them, the number 10 is a heavily doped silicon substrate with the first conductivity type (P-type or N-type), the number 11 is the doped epitaxial layer of the first conductivity type (P-type or N-type), and the number 12 is the second conductivity type. (N-type or P-type) self-doped polysilicon (in-situDoped Poly), number 13...

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Abstract

The invention relates to a transient voltage suppressor structure with ultra-deep grooves; the transient voltage suppressor structure comprises a heavy doped silicon substrate with a first conductive type; a doped epitaxial layer with a first conductive type is arranged on the top surface of the heavy doped silicon substrate; a series of closely-pitched ultra-deep grooves are formed on the surface of the doped epitaxial layer; the height-to-width ratio of the ultra-deep grooves is 10: 1 to 60: 1. The ultra-deep grooves are filled with a doped polycrystalline silicon, are subjected to high-temperature boosting to form a three-dimensional diffused and doped area with a second conductive type, and form PN junctions with longitudinal structures along with the wafer doped silicon substrate with the first conductive type. The junction area of the PN junctions with the longitudinal structures is composed of a lateral area and a bottom area. The junction area of the PN junctions with the longitudinal structures can be increased by the groove etching depth, so that the TVS (transient voltage suppressor) diode structure with the longitudinal PN junctions is capable of bearing greater surge power (kilowatt level) or surge current on a smaller chip.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a transient voltage suppressor structure with ultra-deep trenches. Background technique [0002] Transient Voltage Suppressor (TVS for short) is a diode-based high-performance protection device used to protect the system from various forms of transient high voltage and surge. Such as figure 1 As shown, TVS 1 is connected in parallel with protected circuit 2 on the circuit board. Under normal working conditions, TVS1 presents a high impedance state on the protected circuit 2 . Under the impact of ESD or other forms of surge, TVS1 can turn on at a speed of 10-12 picoseconds, change its high impedance to low impedance, absorb surge power up to several thousand watts, and clamp the voltage between the two poles Located at a predetermined value, it effectively protects the precision components in the electronic circuit from being damaged by ESD and various forms of surge pul...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/861H01L29/06H01L21/329
CPCH01L29/06H01L29/0688H01L29/66136H01L29/861
Inventor 朱伟东赵泊然
Owner 江苏应能微电子股份有限公司
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