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Preparation method of ito thin film

A thin film and thin film deposition technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problems of narrow refractive index range, can not meet the requirements of improving light extraction efficiency, etc., to reduce light extraction loss and improve light extraction efficiency. Effect

Active Publication Date: 2017-10-13
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current ITO thin film has a narrow range of refractive index, which often cannot meet the needs of improving light extraction efficiency.

Method used

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  • Preparation method of ito thin film
  • Preparation method of ito thin film
  • Preparation method of ito thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Table 1 is adjusted by O 2 A recipe (process formula) to adjust the refractive index of the ITO film by using the flow rate. Taking this recipe as an example, explain O 2 The change process of the flow rate in the whole process. The deposition of the ITO thin film in this recipe is divided into two stages, the first stage is RF and DC co-sputtering, and the second stage is DC sputtering. The difference from the traditional two-step method is that the two stages are divided into dozens of small steps. Before the ITO thin film deposition step (step 1 to step 3 in the recipe, including aeration, glow and transition stages), only Ar gas is fed, O 2 Traffic is zero. From the first stage of ITO film deposition (step 4 to step 24, RF and DC co-sputtering), O 2 Gradual increase in flow, step 4 O 2 The flow rate is zero, each step increases 0.05sccm, step 24 O 2 The flow was increased to a maximum of 1 sccm. Step 25 is a transitional step. Steps 26 to 46 are the second ...

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Abstract

A preparing method of an ITO film is provided. The method adopts a magnetron sputtering preparation process. The flux of O2 fed in the process steps changes along with time. By utilization of the method, the ITO film with a wide refractive index range can be prepared, so that the refractive index range of the ITO film can be matched with the refractive indexes of GaN and an encapsulating material and light extraction loss caused by total reflection is effectively reduced, thus increasing the light extraction efficiency of LED devices.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for preparing an ITO thin film. Background technique [0002] ITO (indium tin oxide, indium tin oxide) is an important transparent conductive oxide in the semiconductor technology industry. The transmittance in the visible light range is as high as 90%, which can greatly improve the optoelectronic performance of semiconductor devices. At present, ITO has been applied to an energy-saving device that can replace traditional incandescent lamps and fluorescent lamps, that is, LED (light emitting diode, light emitting diode) device. The structure of the LED device mainly includes n-GaN layer, MQW (multiple quantum well, quantum well) layer, p-GaN layer, ITO thin film layer and alloy electrode layer. Among these thin film layers, the ITO thin film layer is very important for the light emitting performance of LED devices. The transmittance of the ITO thin film in the visible lig...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/08
CPCC23C14/0063C23C14/0084C23C14/086
Inventor 田立飞
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD