Preparation method for aluminum silicon carbide, aluminum silicon carbide obtained with method and electronic component packaging substrate

A technology of aluminum silicon carbide and silicon carbide powder is applied in the field of aluminum silicon carbide and electronic component packaging bottom plates, and aluminum silicon carbide preparation fields, which can solve the problem of difficult to meet the use requirements of high-power power electronic devices, and reduce the performance and impact of electronic device packaging bottom plates. Device reliability and other issues, to achieve the effect of improving thermal conductivity, uniform internal structure, and maintaining flexural strength

Active Publication Date: 2015-05-27
HUNAN HARVEST TECH DEV
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Problems solved by technology

Although the traditional copper base plate has good thermal conductivity, its expansion coefficient does not match the ceramic substrate and semiconductor chip of power electronic components, which affects the reliability of the device and is difficult to meet the requirements of high-power power electronic devices.
[0003] The internal uniformity of the existing aluminum silicon carbide material is poor, which reduces its performance as the bottom plate of electronic device packaging

Method used

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  • Preparation method for aluminum silicon carbide, aluminum silicon carbide obtained with method and electronic component packaging substrate
  • Preparation method for aluminum silicon carbide, aluminum silicon carbide obtained with method and electronic component packaging substrate
  • Preparation method for aluminum silicon carbide, aluminum silicon carbide obtained with method and electronic component packaging substrate

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preparation example Construction

[0023] The preparation method of aluminum silicon carbide provided by the invention includes the steps of powder filling and aluminizing. The contents not particularly limited in these steps can be carried out according to conventional steps. The powder filling step includes filling the powder into the aluminum substrate to obtain a powder board. The powder plate is filled with silicon carbide powder into the depression on the surface of the aluminum plate. The recessed shape is of any depth, but cannot penetrate the aluminum plate.

[0024] In the existing aluminizing step, if no aluminum foil is laid on the surface of silicon carbide, when the aluminum liquid submerges the silicon carbide powder, the filled silicon carbide powder will be washed by the aluminum liquid and partially piled up. Lay aluminum foil with a thickness of 0.5 mm on the surface of the compacted silicon carbide powder. By arranging the aluminum foil of this thickness on the surface of the silicon carb...

Embodiment 1

[0038] 1. Powder blending: Mix 10μm spherical silicon carbide powder and 70μm spherical silicon carbide powder at a volume ratio of 1:3, and fully stir in a mixer until the powder is evenly mixed, and then pass through a 50-mesh sieve.

[0039] 2. Preparation of aluminum substrate: mill out 3 square grooves with a depth of 3mm on one side of a square aluminum block (210mm×110mm×5mm) with a thickness of 5mm;

[0040] 3. Powder filling: fill the mixed powder obtained in step 1 into the three square grooves of the aluminum substrate in step 2, compact it under 100MPa to obtain a powder plate, and cover the powder with aluminum foil with a thickness of 0.5mm surface;

[0041]4. Aluminizing: Put the powder plate covered with aluminum foil obtained in step 3 into the mold, then immerse it in molten aluminum at 750°C, vacuumize to 700Pa at room temperature, and then pressurize to 5MPa for 10 minutes , to obtain an electronic packaging base plate embedded with aluminum silicon carbid...

Embodiment 2

[0045] 1. Powder blending: Mix 15μm spherical silicon carbide powder and 80μm spherical silicon carbide powder at a volume ratio of 1:3, and fully stir in a mixer until the powder is evenly mixed, and then pass through a 50-mesh sieve.

[0046] 2. Preparation of aluminum substrate: mill out three square grooves with a depth of 3mm on one side of a square aluminum block (210mm×110mm×5mm) with a thickness of 5mm;

[0047] 3. Powder filling: fill the mixed powder obtained in step 1 into the three square grooves of the aluminum substrate in step 2, compact it under 100MPa to obtain a powder plate, and cover the powder with aluminum foil with a thickness of 0.5mm surface;

[0048] 4. Aluminizing: Put the powder plate covered with aluminum foil obtained in step 3 into the mold, then immerse it in molten aluminum at 750°C, vacuumize to 700Pa at room temperature, and then pressurize to 5MPa for 10 minutes , to obtain an electronic packaging base plate embedded with aluminum silicon c...

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Abstract

The invention provides a preparation method for aluminum silicon carbide and aluminum silicon carbide obtained with the method. The preparation method for aluminum silicon carbide comprises powder filling and aluminization, wherein in the powder filling step, a groove of an aluminum substrate is filled with powder and a powder plate is formed; an aluminum foil with the depth being 0.5 mm is laid on the surface of the powder plate; other additives except aluminum and silicon carbide are not added into aluminum silicon carbide. According to the preparation method for aluminum silicon carbide, the aluminum foil with the depth of 0.5 mm is laid on the surface of the silicon carbide powder and then aluminization is carried out, so that scouring of molten aluminum to a silicon carbide layer in an aluminization process can be prevented and an aluminum silicon carbide material obtained after the aluminization step is guaranteed to be uniform in internal structure. Moreover, the method provided by the invention keeps the bending resistance of the aluminum silicon carbide material under a condition that no additive is added, so that the thermal conductivity of the obtained aluminum silicon carbide material is increased to 250-280 W/mK.

Description

technical field [0001] The invention relates to the field of aluminum silicon carbide materials, in particular to a method for preparing aluminum silicon carbide, the obtained aluminum silicon carbide and an electronic component packaging base plate. Background technique [0002] With the continuous improvement of the integration of electronic components and the continuous increase of the power of power semiconductor devices, the requirements for the reliability of electronic packaging devices are also getting higher and higher, and new requirements are put forward for the substrate materials and structures used in electronic packaging. Although the traditional copper base plate has good thermal conductivity, its expansion coefficient does not match the ceramic substrate and semiconductor chip of power electronic components, which affects the reliability of the device and is difficult to meet the requirements of high-power power electronic devices. [0003] The internal unif...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/48H01L23/14
Inventor 陈迎龙王黎明蒋文评杨盛良
Owner HUNAN HARVEST TECH DEV
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