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An erbium-doped CEO 2 Thin film electroluminescent device and preparation method thereof

A technology of electroluminescent devices and thin films, which is applied in the field of optoelectronics and can solve problems such as electroluminescence that has not been seen

Inactive Publication Date: 2017-06-20
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In recent years, researchers have reported that pure CeO 2 , CeO 2 :Er 3+ , CeO 2 : Eu 3+ , CeO 2 : Sm 3+ The luminescent properties of other systems (S.Fujihara, M.Oikawa, M.J.Appl.Phys.S, 95, 8002(2004); H.Guo, J.Solid StateChem.180(1), 127(2007)), but these All are only aimed at the photoluminescent performance of the system, and no rare earth-doped CeO 2 Research on electroluminescence of system devices

Method used

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  • An erbium-doped CEO <sub>2</sub> Thin film electroluminescent device and preparation method thereof
  • An erbium-doped CEO <sub>2</sub> Thin film electroluminescent device and preparation method thereof
  • An erbium-doped CEO <sub>2</sub> Thin film electroluminescent device and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0044] (1) The resistivity is about 0.001 ohm cm, and the size is 15×15 mm 2 1. An N-type silicon wafer with a thickness of 625 microns is used as the silicon substrate. After cleaning, place the silicon wafer in the radio frequency sputtering chamber, and use a vacuum pump to pump the pressure in the chamber to 4×10 -3 After Pa, pass pure Ar gas to 1Pa, and use a mole percentage of 0.25% Er 2 o 3 CeO 2 The ceramic target is sputtered to deposit the thin film, and the applied power is 120W; during the deposition process, the temperature of the silicon substrate is kept at 100°C, and the deposition time is 60 minutes;

[0045] (2) Place the deposited film in an oxygen atmosphere and heat-treat at 1100°C for 5 minutes to form Er-doped CeO 2 Thin film, the thickness of the film is about 60nm, and the doping amount of Er is 0.5% in molar percentage;

[0046] (3) In Er-doped CeO 2 A transparent ITO electrode with a thickness of about 150nm is deposited on the film by DC react...

Embodiment 2

[0058] (1) The resistivity is about 0.001 ohm cm, and the size is 15×15 mm 2 1. An N-type silicon wafer with a thickness of 625 microns is used as the silicon substrate. After cleaning, place the silicon wafer in the radio frequency sputtering chamber, and use a vacuum pump to pump the pressure in the chamber to 4×10 -3 After Pa, pass pure Ar gas to 1Pa, use 0.25% (mol percent) Er 2 o 3 CeO 2 The ceramic target is sputtered to deposit the film, and the applied power is 120W; during the deposition process, the temperature of the silicon substrate is kept at 100°C, and the deposition time is 60min;

[0059] (2) Place the deposited film in an oxygen atmosphere and heat-treat at 1100°C for 5 minutes to form Er-doped CeO 2 Thin film, the thickness of the film is about 60nm, and the doping amount of Er is 0.5% of atomic ratio;

[0060] (3) In Er-doped CeO 2 A transparent ITO electrode with a thickness of about 150nm is deposited on the film by DC reactive sputtering, which is ...

Embodiment 3

[0071] (1) The resistivity is about 0.001 ohm cm, and the size is 15×15 mm 2 1. An N-type silicon wafer with a thickness of 625 microns is used as the silicon substrate. After cleaning, place the silicon wafer in the radio frequency sputtering chamber, and use a vacuum pump to pump the pressure in the chamber to 4×10 -3 After Pa, pass pure Ar gas to 1Pa, use Er mixed with 2% (mol percentage) 2 o 3 CeO 2 The ceramic target is sputtered to deposit the film, and the applied power is 120W; during the deposition process, the temperature of the silicon substrate is kept at 100°C, and the deposition time is 60min;

[0072] (2) Place the deposited film in an oxygen atmosphere and heat-treat at 1100°C for 5 minutes to form Er-doped CeO 2 Thin film, the thickness of the film is about 60nm, and the doping amount of Er is 4% by atomic ratio;

[0073] (3) In Er-doped CeO 2 A transparent ITO electrode with a thickness of about 150nm is deposited on the film by DC reactive sputtering, ...

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Abstract

The invention discloses an electroluminescence device based on an erbium-doped CeO2 film. The electroluminescence device comprises a silicon substrate, wherein the front side of the silicon substrate is successively provided with a luminescent layer and a transparent electrode layer; the back surface of the silicon substrate is provided with an Ohmic contact electrode; the luminescent layer is the rare earth erbium-doped CeO2 film. The invention also discloses a preparation method and a luminescence method of the electroluminescence device. According to the electroluminescence device, the characteristic luminescence of erbium ions in a visible region and an infrared region can be obtained under low (less than 10V) forward or reverse direct current bias voltage (the forward bias voltage exists when the transparent electrode layer is supplied with positive voltage, and the reverse bias voltage exists when the transparent electrode layer is supplied with negative voltage).

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to an erbium-doped CeO 2 Thin-film electroluminescent devices and methods for their preparation. Background technique [0002] Rare earth-doped oxide luminescent materials have important applications in the fields of flat display, laser materials and optical fiber communication. [0003] Due to erbium (Er 3+ The luminescent wavelength of the 4f electron transition in the inner layer of ) ions is at ~1540nm, which is in line with the minimum absorption wavelength of optical fiber communication. Therefore, the research on Er-doped materials is of great significance to silicon-based optoelectronic communication. Researches on erbium-doped Si-based luminescent materials have been reported for a long time, most of them focus on erbium-doped silicon oxide (A. , and F.Priolo, J.Appl.Phys.107, 054302(2010)), silicon nitride (S.Yerci, R.Li, and L.Dal Negro, Appl.Phys.Lett.97, 0811...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/26H01L33/00
Inventor 马向阳吕春燕杨德仁
Owner ZHEJIANG UNIV