Preparation method of high-purity copper target

A technology of high-purity copper and target material, which is applied in the field of sputtering target material, can solve problems such as abnormal grain structure, low deformation temperature, and large deformation resistance, and achieve the effects of fully and thoroughly deformed, reduced plastic deformation resistance, and uniform deformation

Active Publication Date: 2015-06-10
GRIKIN ADVANCED MATERIALS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] This patent is mainly aimed at plastic deformation of aluminum and aluminum alloys at 130-170°C, but for high-purity copper targets, the deformation temperature is low, the deformation resistance is large, and the deformation is insufficient, resulting in abnormal grain structure in the follow-up

Method used

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  • Preparation method of high-purity copper target

Examples

Experimental program
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Effect test

Embodiment 1

[0025] The size specification of high-purity copper ingot is Φ220×150mm, and the purity is 99.9999% (6N). The heating furnace uniformly heats the high-purity copper ingot to 450°C and keeps it warm for 3 hours. The air hammer is upsetting in the axial direction, and the size of the workpiece after upsetting is about Φ285×90mm; then the blank is laid flat along the axial direction, and then drawn out, the size of the workpiece after being drawn out is about Φ220×150mm, this is one round . The billet is forged one more round in the same way. The forged billet is subjected to 12 passes of reciprocating cold rolling on a two-roll mill, with a deformation of 12% in each pass and a total deformation of 80%. The size of the billet after rolling is about Φ490×30mm. The average grain size of the billet after rolling is 23 μm after being held at 350 ° C for 2 hours (such as figure 1 ).

Embodiment 2

[0027] The size specification of the high-purity copper ingot is Φ150×150mm, and the purity is 99.999% (5N). The heating furnace uniformly heats the high-purity copper ingot to 500°C and keeps it warm for 1 hour. The air hammer is stretched along the axial direction, and the workpiece size after stretching is about Φ116×250mm; then the billet is erected along the axial direction, and then upset, the workpiece size after upsetting is about Φ150×150mm, this is one round . The billet was continuously forged for 3 rounds in the same way. The forged billet is subjected to 8 passes of reciprocating cold rolling on a two-roll mill, with a deformation of 20% in each pass and a total deformation of 85%. The size of the billet after rolling is about Φ390×22mm. The average grain size of the billet after rolling was 35 μm after being kept at 450° C. for 1 hour.

Embodiment 3

[0029] The size specification of high-purity copper ingot is Φ150×100mm, and the purity is 99.9999% (6N). The heating furnace uniformly heats the high-purity copper ingot to 400°C and keeps it warm for 3 hours. Air hammer upsetting along the axial direction, the size of the workpiece after upsetting is about Φ210×51mm, then the blank is laid flat along the axial direction, and then stretched, the size of the workpiece after being stretched is about Φ150×100mm, this is one round . The blank is continuously forged for 5 rounds according to the same method. After forging, the blank is subjected to 16 passes of reciprocating cold rolling on a two-roll rolling mill. The deformation of each pass is 10%, and the total deformation is 80%. The size of the blank after rolling is about Φ330× 20mm. The average grain size of the billet after rolling was 12 μm after being kept at 250° C. for 4 hours.

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Abstract

The invention discloses a preparation method of a high-purity copper sputtering target, belonging to the technical field of sputtering targets. The method mainly comprises the following steps: carrying out upsetting and stretching plastic deformation on a high-purity copper target blank; cooling the target blank after multiple rounds of upsetting and stretching deformation; carrying out rolling deformation on the cooled high-purity copper target blank to prepare a high-purity copper target blank; and then carrying out thermal treatment on the target blank to obtain the high-purity copper target with fine and uniform tissues. The preparation method has the advantages that the high-purity copper target is prepared by adopting the method combining plastic deformation with thermal treatment; grains of the target prepared by the method are fine and are uniform in distribution, thus completely meeting the requirements of sputtering; meanwhile, the consistency and repeatability of the processing technology are ensured by adopting plastic processing equipment with controllability; the method is simple in process, flexible in equipment operation and high in production efficiency and is suitable for large-scale industrial production.

Description

technical field [0001] The invention belongs to the technical field of sputtering targets, and in particular relates to a method for preparing high-purity copper sputtering targets by combining thermoplastic deformation and heat treatment to refine crystal grains. Background technique [0002] With the continuous reduction of the feature size of integrated circuits, the RC delay of the interconnection line has become the main problem affecting the speed of the circuit. Therefore, looking for conductive materials with lower resistivity and dielectric materials with lower dielectric constant has become a major development direction of VLSI technology. Therefore, copper material becomes the best choice to replace aluminum material. Compared with aluminum wiring, copper wiring has the following advantages: the resistivity of copper is lower than that of aluminum; copper conductivity is good; copper wiring can improve the response speed of IC chips; copper wiring process steps a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C22F1/08
Inventor 高岩李勇军何金江曾浩王欣平王兴权
Owner GRIKIN ADVANCED MATERIALS
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