A processing method for solving esd phenomenon of photomask graphics unit
A technology of graphics unit and processing method, which is applied to the original photomechanical processing, photographic process of pattern surface, optics, etc., and can solve problems such as missing corners or bridging
Active Publication Date: 2019-05-14
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF5 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0009] The purpose of the present invention is to provide a processing method for solving the ESD phenomenon of the photomask graphic unit, and to solve the phenomenon that the sharp corners of two adjacent graphic units are easily caused by the high electric field formed by the accumulation of charges, resulting in missing corners or bridging.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0030] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention. Secondly, the present invention is described in detail by means of schematic diagrams. When describing the examples of the present invention in detail, for the convenience of explanation, the schematic diagrams are not partially enlarged according to the general scale, which should not be used as a limitation of the present invention.
[0031] It should be noted that, in the following examples, using figure 2 The structural schematic diagram of the present invention describes in detail the processing method for solving the ESD phenomenon of the mask pattern unit. Wh...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| width | aaaaa | aaaaa |
Login to View More
Abstract
The invention relates to the technical field of the semiconductor technology, and provides a processing method for avoiding the photomask graph unit ESD phenomenon. The method comprises the steps of firstly, providing a photoetching model graph; secondly screening out two adjacent graph units according to the preset range of graph information, wherein the graph information comprises the area of each graph unit, the degree of each included angle of each graph unit and the distance between the two adjacent graph units; thirdly, selecting the vertex of the included angle of any graph unit; finally, using the vertex as the circle center, drawing a circle with the radius being the preset value, and extending a wire from the vertex to the edges of the adjacent graph units, so that the adjacent graph units are connected and electrostatic charges are released. In this way, the phenomenon of unfilled corners or bridge connection caused by a high electric field formed by charge accumulation generated between the graph units is avoided.
Description
technical field [0001] The invention relates to the technical field of semiconductor process equipment, in particular to a processing method for solving the ESD phenomenon of a pattern unit of a mask. Background technique [0002] Semiconductor technology continues to develop along Moore's law, the critical dimension is getting smaller and smaller, and the integration level of chips is getting higher and higher, which puts forward more and more stringent requirements on the semiconductor manufacturing process, so it is necessary to reduce as much as possible in the process Minimize the error of each step and reduce the failure of devices caused by errors. [0003] In the semiconductor manufacturing process, the photolithography process has been developed as the core technology of each technology generation. Photolithography is the process of transferring the circuit structure in the form of a pattern on the mask (mask) to the surface of a silicon wafer coated with photoresi...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/36
CPCG03F1/00G03F1/36
Inventor 夏国帅张辰明魏芳朱骏吕煜坤张旭昇
Owner SHANGHAI HUALI MICROELECTRONICS CORP