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Thin film transistor and manufacturing method and organic light emitting diode display device thereof

A thin-film transistor and light-emitting diode technology, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of significant floating body effect, inability to effectively suppress the floating body effect, and increase in the area of ​​thin-film transistors, so as to suppress the floating body effect and improve Electrical characteristics, the effect of increasing the area

Active Publication Date: 2018-05-22
KUNSHAN GO VISIONOX OPTO ELECTRONICS CO LTD
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  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this technology will increase the area of ​​thin film transistors, and the floating body effect cannot be effectively suppressed due to the existence of polysilicon (poly-Si) body resistance, and the wider the channel, the greater the body polysilicon (poly-Si) resistance, and the more significant the floating body effect

Method used

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  • Thin film transistor and manufacturing method and organic light emitting diode display device thereof
  • Thin film transistor and manufacturing method and organic light emitting diode display device thereof
  • Thin film transistor and manufacturing method and organic light emitting diode display device thereof

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Embodiment Construction

[0046] Figure 1A A plan view showing the first step of a method of manufacturing a TFT according to an exemplary embodiment of the present invention, Figure 1B for along Figure 1A A cross-sectional view taken along the line I-I. see Figure 1A with 1B A substrate 1 is provided, the substrate 1 is formed of glass or plastic, and a buffer layer 2 is formed on the substrate 1, and the buffer layer 2 is formed on the substrate 1 by chemical vapor deposition (CVD). The buffer layer 2 functions to prevent moisture or impurities in the substrate from diffusing into the semiconductor layer, or to control heat transfer efficiency during crystallization to facilitate crystallization of the semiconductor layer, which will be formed in the following process. The buffer layer 2 can be a single layer, or can be composed of multi-layer films.

[0047] Subsequently, a first amorphous silicon layer is formed on the buffer layer 2 . It can be formed by chemical vapor deposition (CVD), and...

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Abstract

The invention provides a thin film transistor and its manufacturing method and its organic light emitting diode display device, comprising a first semiconductor layer, a second semiconductor layer deposited on the first semiconductor layer, a gate insulating layer on the second semiconductor layer, and a a gate metal layer above the gate insulating layer, the second semiconductor layer forms a source region, a drain region and a channel region between the source region and the drain region, and the first semiconductor layer is located in the source region or the drain region region, and extending out of the covering of the second semiconductor layer to form a body contact region, which can form an electrical connection with the source region or the gate metal layer. Such setting can effectively suppress the floating body effect.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor, a manufacturing method and an organic light emitting diode display device thereof. Background technique [0002] Organic light-emitting diode (OLED) display device is an active light-emitting device. Compared with the current mainstream flat-panel display technology thin-film transistor liquid crystal display (TFT-LCD), OLED has the advantages of high contrast, wide viewing angle, low power consumption, and thinner volume. , is expected to become the next-generation flat panel display technology after LCD, and is one of the most concerned technologies in flat panel display technology, especially suitable for large-sized active matrix organic light emitting diode (Active Matrix OLED, AMOLED) display devices. Polycrystalline silicon (poly-Si) with higher mobility is widely used as thin film transistors due to the large demand for driving current in OLEDs an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L27/32H01L21/336
CPCH01L29/6675H01L29/78615H01L29/78672H10K59/12H10K59/10
Inventor 杜哲陆海峰
Owner KUNSHAN GO VISIONOX OPTO ELECTRONICS CO LTD
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