Thin film encapsulation method, film encapsulation structure, and display device
A technology of thin film encapsulation and film layer, which is applied in the direction of coating, gaseous chemical plating, electric solid device, etc. It can solve the problems of flexible display device damage, detachment or cracking between layers, rough surface of film quality, etc., and achieve bending resistance Strong performance, simple process operation, and the effect of reducing the defect of "small hole"
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Embodiment 1
[0064] (1) Place the device to be packaged in a plasma-enhanced chemical vapor deposition device, set a mask to control the packaged area, and shield the area that does not need to be packaged;
[0065] (2) Adjust the gas SiH passing into the plasma-enhanced chemical vapor deposition device 4 (diluted to 10% by He or Ar) and N 2 O, deposited and grown inorganic SiO x Film layer 1000nm;
[0066] (3) Adjust the N that passes into the plasma-enhanced chemical vapor deposition device 2 , using eicosyltrichlorosilane to deposit eicosyltrichlorosilane film layer 100nm;
[0067] (4) Steps (2) and (3) are repeated 4 times and 3 times alternately to obtain the thin film encapsulation structure 1, such as image 3 shown.
Embodiment 2
[0069] (1) Place the device to be packaged in a plasma-enhanced chemical vapor deposition device, set a mask to control the packaged area, and shield the area that does not need to be packaged;
[0070] (2) Adjust the gas SiH passing into the plasma-enhanced chemical vapor deposition device 4 (diluted to 10% by He or Ar) and N 2 O, deposited and grown inorganic SiO x Film layer 1000nm;
[0071] (3) Adjust the N that passes into the plasma-enhanced chemical vapor deposition device 2 , using eicosyltrichlorosilane to deposit eicosyltrisilane film layer 1000nm;
[0072] (4) Steps (2), (3) are repeated 4 times and 3 times alternately to obtain the thin film encapsulation structure 2, such as image 3 shown.
Embodiment 3
[0074] (1) Place the device to be packaged in a plasma-enhanced chemical vapor deposition device, set a mask to control the packaged area, and shield the area that does not need to be packaged;
[0075] (2) Adjust the gas SiH passing into the plasma-enhanced chemical vapor deposition device 4 (diluted to 10% by He or Ar) and N 2 O, deposited and grown inorganic SiO x Film layer 1000nm;
[0076] (3) Adjust the N that passes into the plasma-enhanced chemical vapor deposition device 2 , using eicosyltrichlorosilane to deposit eicosyltrisilane film layer 1000nm;
[0077] (4) Steps (2), (3) are repeated 4 times and 3 times alternately to obtain the thin film encapsulation structure 3, such as image 3 shown.
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Abstract
Description
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