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Thin film encapsulation method, film encapsulation structure, and display device

A technology of thin film encapsulation and film layer, which is applied in the direction of coating, gaseous chemical plating, electric solid device, etc. It can solve the problems of flexible display device damage, detachment or cracking between layers, rough surface of film quality, etc., and achieve bending resistance Strong performance, simple process operation, and the effect of reducing the defect of "small hole"

Active Publication Date: 2016-08-24
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] With the rise of flexible OLEDs, the packaging of flexible OLEDs has been specifically proposed. On the one hand, it is required that the permeability of the packaging structure to water vapor is lower than 5×10 -6 g / m 2 d, the permeability to oxygen is lower than 10 -5 cm 2 / m 2 d. On the other hand, the packaging structure is also required to be flexible and bendable, which makes the traditional rigid packaging structure unable to meet the requirements, and new packaging materials and packaging structures represented by thin-film packaging structures emerge.
[0004] The thin film encapsulation structure includes the inorganic insulating layer SiO x or SiN x Equal film layer, although the inorganic insulating film layer has high waterproof and oxygen permeability, but its own film surface is rough and has "small holes", which makes it easy for external water and oxygen to invade through the "small holes", thereby reducing the Water and Oxygen Barrier Properties of Encapsulation Structure
Moreover, the thin-film packaging structure is composed of organic layers and inorganic insulating layers physically alternately. Due to the physical connection between the inorganic insulating layer and the organic material or glue, the thin-film packaging structure will be detached or cracked after being bent several times. As a result, the flexible display device is directly subjected to destructive damage, which affects the service life of the device

Method used

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  • Thin film encapsulation method, film encapsulation structure, and display device
  • Thin film encapsulation method, film encapsulation structure, and display device
  • Thin film encapsulation method, film encapsulation structure, and display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0064] (1) Place the device to be packaged in a plasma-enhanced chemical vapor deposition device, set a mask to control the packaged area, and shield the area that does not need to be packaged;

[0065] (2) Adjust the gas SiH passing into the plasma-enhanced chemical vapor deposition device 4 (diluted to 10% by He or Ar) and N 2 O, deposited and grown inorganic SiO x Film layer 1000nm;

[0066] (3) Adjust the N that passes into the plasma-enhanced chemical vapor deposition device 2 , using eicosyltrichlorosilane to deposit eicosyltrichlorosilane film layer 100nm;

[0067] (4) Steps (2) and (3) are repeated 4 times and 3 times alternately to obtain the thin film encapsulation structure 1, such as image 3 shown.

Embodiment 2

[0069] (1) Place the device to be packaged in a plasma-enhanced chemical vapor deposition device, set a mask to control the packaged area, and shield the area that does not need to be packaged;

[0070] (2) Adjust the gas SiH passing into the plasma-enhanced chemical vapor deposition device 4 (diluted to 10% by He or Ar) and N 2 O, deposited and grown inorganic SiO x Film layer 1000nm;

[0071] (3) Adjust the N that passes into the plasma-enhanced chemical vapor deposition device 2 , using eicosyltrichlorosilane to deposit eicosyltrisilane film layer 1000nm;

[0072] (4) Steps (2), (3) are repeated 4 times and 3 times alternately to obtain the thin film encapsulation structure 2, such as image 3 shown.

Embodiment 3

[0074] (1) Place the device to be packaged in a plasma-enhanced chemical vapor deposition device, set a mask to control the packaged area, and shield the area that does not need to be packaged;

[0075] (2) Adjust the gas SiH passing into the plasma-enhanced chemical vapor deposition device 4 (diluted to 10% by He or Ar) and N 2 O, deposited and grown inorganic SiO x Film layer 1000nm;

[0076] (3) Adjust the N that passes into the plasma-enhanced chemical vapor deposition device 2 , using eicosyltrichlorosilane to deposit eicosyltrisilane film layer 1000nm;

[0077] (4) Steps (2), (3) are repeated 4 times and 3 times alternately to obtain the thin film encapsulation structure 3, such as image 3 shown.

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Abstract

The invention provides a thin-film packaging method, a thin-film packaging structure, and a display device, which belong to the field of packaging structures and packaging methods, can effectively prevent water and oxygen from invading display devices, and improve the bending resistance of the display devices. The thin-film packaging method includes: 1) placing the device to be packaged in a plasma-enhanced chemical vapor deposition device, setting a mask to control the packaging area, and shielding the area that does not need to be packaged; 2) adjusting the flow of plasma-enhanced chemical vapor deposition The gas in the deposition device deposits the inorganic silicon material film layer; 3) adjusts the N2 that passes into the plasma-enhanced chemical vapor deposition device, and utilizes the organic material that chemically reacts with the inorganic silicon material to deposit on the inorganic silicon material film layer Organosilane film layer. The invention can be used in the manufacture of thin film encapsulation structures and display devices.

Description

technical field [0001] The invention relates to the field of packaging structures and packaging methods, in particular to a thin film packaging method, a thin film packaging structure, and a display device. Background technique [0002] Studies have shown that components such as water vapor and oxygen in the air have a great impact on the life of OLEDs. The reasons are mainly manifested in the following two aspects: First, OLED devices need to inject electrons from the cathode, and the lower the cathode work function, the better. The metals of the cathode, such as silver, aluminum and magnesium, are generally more active and easily react with the infiltrated water vapor; second, the infiltrated water vapor will further chemically react with the hole transport layer and the electron transport layer, thereby causing device failure. Therefore, in order to prevent the aging and instability of organic optoelectronic devices, effective packaging of OLEDs is required. [0003] Wit...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/56H01L51/52H01L27/32
CPCC23C16/042C23C16/345C23C16/401C23C16/50H10K59/8731H10K71/00H10K50/844H10K50/8445
Inventor 孙雯雯
Owner BOE TECH GRP CO LTD