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Welding method of tungsten titanium aluminum target assembly

A tungsten-titanium target and welding method technology, applied in welding equipment, welding/welding/cutting items, non-electric welding equipment, etc., can solve the problems of large deformation, low welding strength, inability to achieve welding, etc., and achieve high welding strength , the effect of preventing oxidation

Active Publication Date: 2016-08-17
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is that the target assembly formed by welding the tungsten-titanium target and the aluminum back plate with the existing welding method has low welding strength and large deformation. The need to use tungsten-titanium-aluminum target components

Method used

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  • Welding method of tungsten titanium aluminum target assembly
  • Welding method of tungsten titanium aluminum target assembly
  • Welding method of tungsten titanium aluminum target assembly

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Embodiment Construction

[0034] In the prior art, the welding process of the tungsten-titanium target and the aluminum back plate is a brazing process using tin solder or indium solder as the solder. The melting point of the above-mentioned tin solder or indium solder is lower than 250°C. details as follows:

[0035] refer to figure 1 , providing a tungsten-titanium target material 11 and an aluminum back plate 12 . The tungsten-titanium target 11 is a cylinder, including a circular surface I to be welded, a surface III to be sputtered opposite to the surface I to be welded, and a side IV connecting the surface I to be welded and the surface III to be sputtered. The aluminum back plate 12 has a groove 121 for accommodating the tungsten-titanium target 11 . The height of the side wall of the groove 121 is greater than the height of the side IV of the tungsten-titanium target 11 . Then, the solder layer 13 is disposed on the bottom surface II of the groove 121 . Next, the tungsten-titanium target 1...

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Abstract

A welding method for a tungsten-titanium-aluminum target material component includes the following steps: providing a tungsten-titanium target material and an aluminum backboard, wherein the aluminum backboard is provided with a groove for accommodating part of the tungsten-titanium target material, and the depth of the groove is 1-2mm; disposing the tungsten-titanium target material in the groove, and enabling a to-be-welded surface of the tungsten-titanium target material to contact with the bottom surface of the groove to form a target material component blank; putting the target material component blank into a vacuum cover; welding the to-be-welded surface of the tungsten-titanium target material and the bottom surface of the groove into the tungsten-titanium-aluminum target material component by a hot isostatic pressing process; cooling the vacuum cover after welding, and removing the vacuum cover to acquire the tungsten-titanium-aluminum target material component. By the welding method, high-strength welding of target materials can be achieved.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor sputtering targets, in particular to a welding method for tungsten-titanium-aluminum target components. Background technique [0002] In the semiconductor industry, the target assembly is composed of a target that meets the sputtering performance and a back plate combined with the target. The back plate plays a supporting role in the target assembly and has the effect of conducting heat. [0003] During the sputtering process, the working environment of the target assembly is relatively harsh. Specifically: the ambient temperature of the target assembly is relatively high, such as 300°C to 600°C; in addition, one side of the target assembly is cooled by cooling water, while the other side is at 10 -9 In the high vacuum environment of Pa, a huge pressure difference is formed on the opposite sides of the target component; moreover, the target component is in a high-voltage electric field...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B23K20/14B23K20/24B23K20/16
CPCB23K20/021B23K20/14B23K20/2275B23K20/24B23K2103/18
Inventor 姚力军赵凯相原俊夫大岩一彦潘杰王学泽张涛
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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