Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Welding method of tungsten-titanium-copper target assembly

A tungsten-titanium target and welding method technology, applied in welding equipment, non-electric welding equipment, metal processing equipment, etc., can solve the problems of large deformation, low welding strength, inability to achieve welding, etc., achieve high welding strength, prevent oxidation Effect

Active Publication Date: 2016-08-31
KONFOONG MATERIALS INTERNATIONAL CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is that the target assembly formed by welding the tungsten-titanium target and the copper back plate with the existing welding method has low welding strength and large deformation. The need to use tungsten-titanium-copper target components

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Welding method of tungsten-titanium-copper target assembly
  • Welding method of tungsten-titanium-copper target assembly
  • Welding method of tungsten-titanium-copper target assembly

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] In the prior art, the welding process of the tungsten-titanium target and the copper back plate is a brazing process using tin solder or indium solder as the solder. The melting point of the above-mentioned tin solder or indium solder is lower than 250°C. details as follows:

[0035] refer to figure 1 , providing a tungsten-titanium target material 11 and a copper back plate 12 . The tungsten-titanium target 11 is a cylinder, including a circular surface I to be welded, a surface III to be sputtered opposite to the surface I to be welded, and a side IV connecting the surface I to be welded and the surface III to be sputtered. The copper back plate 12 has a groove 121 for accommodating the tungsten-titanium target 11 . The height of the side wall of the groove 121 is greater than the height of the side IV of the tungsten-titanium target 11 . Then, the solder layer 13 is disposed on the bottom surface II of the groove 121 . Next, the tungsten-titanium target 11 is pl...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
depthaaaaaaaaaa
thicknessaaaaaaaaaa
melting pointaaaaaaaaaa
Login to View More

Abstract

A welding method for a tungsten-titanium-copper target material component includes the following steps: providing a tungsten-titanium target material and a copper backboard, wherein the copper backboard is provided with a groove for accommodating part of the tungsten-titanium target material, and the depth of the groove is 1-2mm; disposing the tungsten-titanium target material in the groove, and enabling a to-be-welded surface of the tungsten-titanium target material to contact with the bottom surface of the groove to form a target material component blank; putting the target material component blank into a vacuum cover; welding the to-be-welded surface of the tungsten-titanium target material and the bottom surface of the groove into the tungsten-titanium-copper target material component by a hot isostatic pressing process; cooling the vacuum cover after welding, and removing the vacuum cover to acquire the tungsten-titanium-copper target material component. By the welding method, high-strength welding of target materials can be achieved.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor sputtering targets, in particular to a welding method for a tungsten-titanium-copper target assembly. Background technique [0002] In the semiconductor industry, the target assembly is composed of a target that meets the sputtering performance and a back plate combined with the target. The back plate plays a supporting role in the target assembly and has the effect of conducting heat. [0003] During the sputtering process, the working environment of the target assembly is relatively harsh. Specifically: the ambient temperature of the target assembly is relatively high, such as 300°C to 600°C; in addition, one side of the target assembly is cooled by cooling water, while the other side is at 10 -9 In the high vacuum environment of Pa, a huge pressure difference is formed on the opposite sides of the target component; moreover, the target component is in a high-voltage electric field a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B23K20/22B23K20/24
CPCB23K20/22B23K20/24
Inventor 姚力军赵凯相原俊夫大岩一彦潘杰王学泽张涛
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com