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Four-junction cascaded solar cell and preparation method thereof

A solar cell and cascading technology, which is applied in the field of solar cells and photoelectric components, can solve the problems of increasing the cost of making batteries and increasing the difficulty of making batteries, and achieves the effects of reducing the difficulty of preparation, reducing the cost of preparation, and reducing heat loss

Active Publication Date: 2017-07-28
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Problems solved by technology

However, wafer-bonded cells often have two main problems: Taking the bonding of GaInP / GaAs and InGaAlAs / InGaAs double-junction cells as an example, wafer-bonded cells require two substrates, GaAs and InP, which greatly increases the production capacity of the cell. Second, the bonding part of the wafer-bonded battery needs good ohmic contact and good light transmittance, which brings great challenges to the process and increases the difficulty of making the battery

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  • Four-junction cascaded solar cell and preparation method thereof

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Embodiment Construction

[0034] In order to better illustrate the technical characteristics and structure of the present invention, the following is a detailed description in conjunction with preferred embodiments of the present invention and accompanying drawings.

[0035] refer to figure 1, is a schematic diagram of the solar structure provided in this embodiment, the solar cell includes a top electrode 120, a GaInP sub-cell 310, a first tunnel junction 410, a GaAs sub-cell 320, a second tunnel junction 420, a gradient transition Layer 500 , InGaAlAs subcell 330 , third tunnel junction 430 , InGaAs subcell 340 , second substrate 200 and bottom electrode 110 . Wherein, the graded transition layer 500 selects In with a bandgap larger than that of the GaAs subcell. x Ga 1-x-y al y As material, in this embodiment, x=0.05-0.53, y=0.12-0.48, and the values ​​of x and y gradually increase along the direction away from the top electrode 120 . Preferably, the GaInP sub-cell 310 , the GaAs sub-cell 320 , ...

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Abstract

A four-junction cascaded solar cell provided by the present invention includes GaInP sub-cells, GaAs sub-cells, InGaAlAs sub-cells and InGaAs sub-cells arranged in sequence, wherein a gap is arranged between the GaAs sub-cell and the InGaAlAs sub-cell. A graded transition layer formed of InxGa1-x-yAlyAs material, the band gap of the graded transition layer is larger than the band gap of the GaAs sub-cell. The four-junction cascaded solar cell uses GaInP sub-cells, GaAs sub-cells, InGaAlAs sub-cells, and InGaAs sub-cells with band gaps of 1.90eV, 1.42eV, 1.00eV, and 0.73eV, respectively, to reduce the electric current between each sub-cell. The loss of heat energy in the photoelectric conversion process is reduced, and the conversion efficiency of the solar cell is improved; at the same time, the solar cell is formed by one-time growth and bonding with the second substrate, which not only reduces the difficulty of preparing the solar cell, At the same time, the preparation cost of the solar cell is also reduced.

Description

technical field [0001] The invention relates to the field of photoelectric elements, in particular to the field of solar cells. Background technique [0002] Environmental and energy requirements make new energy technologies, including solar energy efficient power generation, more and more important. And the solar cell has been valued for its smaller volume and lighter weight. As a forward-looking and strategic new clean energy technology that supports the sustainable development of my country's national economy, efficient solar power generation technology is listed as a key support and priority development direction in the national medium and long-term scientific and technological development plan. Compared with silicon solar cells, multi-junction III-V compound semiconductor solar cells use a variety of semiconductor materials with different bandgap widths to absorb the part of sunlight that matches their bandgap widths, thereby achieving broad-spectrum absorption of sunl...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0687H01L31/0693H01L31/18
CPCH01L31/0687H01L31/0693H01L31/1876Y02E10/544Y02P70/50
Inventor 何洋董建荣李奎龙孙玉润
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI