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Plasma reactor with highly symmetrical four-fold gas injection

A plasma and reactor technology, used in plasma, electrical components, gaseous chemical plating, etc., can solve problems such as non-uniformity of gas distribution

Active Publication Date: 2015-07-15
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it seems impossible to make the path length of the gas input to the nozzle equal for all inputs and nozzles, resulting in non-uniform gas distribution

Method used

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  • Plasma reactor with highly symmetrical four-fold gas injection
  • Plasma reactor with highly symmetrical four-fold gas injection
  • Plasma reactor with highly symmetrical four-fold gas injection

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Embodiment Construction

[0032] The problem to be solved involves delivering the gas to the injector via the gas channel formed in the cover plate of the chamber. The cover plate in some designs is annular and defines a circular central opening that constitutes a dielectric window through which RF power is coupled into the chamber. All gas inputs are adjacent to each other at the gas supply block, complicating gas delivery. In order for all gas flow paths from each gas input to be of equal length, it is necessary for the gas channels to provide a recursive path that reverses abruptly. This creates turbulence that has the effect of hampering process control. Furthermore, the recursive gas passage occupies a large area, requiring the annular cover plate to have a large area, thus limiting the size of the dielectric window relative to the chamber - an important issue. Further, depending on the position of the gas supply block, the path length differs significantly.

[0033] The tunable gas nozzle has ...

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Abstract

An annular lid plate of a plasma reactor has upper and lower layers of gas distribution channels distributing gas along equal length paths from gas supply lines to respective gas distribution passages of a ceiling gas nozzle.

Description

technical field [0001] The present disclosure relates to a gas injection system for a plasma reactor for processing workpieces, such as semiconductor wafers. Background technique [0002] Controlling the process gas distribution in the chamber of the plasma reactor affects the process control of the etch rate distribution or deposition rate distribution of the workpiece during plasma processing. A tunable gas injection nozzle mounted on the top of the chamber may have different injection slits for different regions, such as the central region and the side regions. Separate gas inputs can feed different injection slits, and individual flow rate controls can be provided for each gas input. Each gas input may supply a different portion of the corresponding injection slit via a different gas flow path. It is desirable that the different gas flow paths from a particular gas input be of equal length for uniformity purposes. However, it seems impossible to make the path length o...

Claims

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Application Information

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IPC IPC(8): H05H1/34H05H1/24
CPCH01J37/3244H01J37/32082C23C16/45561C23C16/45578C23C16/4558
Inventor Y·罗森佐恩K·坦蒂翁I·优素福V·克尼亚齐克S·巴纳
Owner APPLIED MATERIALS INC