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Method for fabricating monolithic silicon wafer including multiple vertical junctions

A silicon wafer, vertical technology, applied in the field of manufacturing a single silicon wafer with vertical p-n multi-junction, can solve problems such as high cost and risk, and achieve the effect of increasing open circuit voltage

Inactive Publication Date: 2018-03-06
COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, several technical issues remain unresolved regarding the actual production of such structures, their cost, and their very high risks

Method used

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  • Method for fabricating monolithic silicon wafer including multiple vertical junctions
  • Method for fabricating monolithic silicon wafer including multiple vertical junctions
  • Method for fabricating monolithic silicon wafer including multiple vertical junctions

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Embodiment Construction

[0036] Hereinafter in this text, the expressions "between and", "from to" and "variing from to" are equivalent and are intended to refer to inclusive boundaries, unless otherwise specified.

[0037] Unless otherwise indicated, the expression "comprises / comprises" should be understood to mean "comprises / comprises at least one".

[0038] Wafer Manufacturing

[0039] Step (i): Liquid bath

[0040] As previously stated, step (i) of the method of the invention consists in providing a liquid bath, also called a "melt" bath, comprising silicon, at least one n-type dopant and at least one p-type dopant miscellaneous agent.

[0041] One or more of the p-type dopants may be selected from boron (B), aluminum (Al), gallium (Ga), indium (In), zinc (Zn) and mixtures thereof.

[0042] Preferably, the p-type dopant is boron.

[0043] More specifically, the one or more p-type dopants can be from 5×10 per cubic centimeter 15 atoms to 10 per cubic centimeter 17atoms, especially from 10...

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Abstract

The present invention relates to a method for manufacturing a monolithic silicon wafer (10) comprising multiple vertical junctions (2) having an alternation of n-doped areas and p-doped areas, including at least the steps of: (i) providing a liquid bath (100) including silicon, at least one n-type doping agent and at least one p-type doping agent; (ii) proceeding to directionally solidify the silicon in a direction (I), varying the convection-diffusion parameters thereof in order to alternate the growth of n-doped silicon layers (101) and p-doped silicon layers (102); and (iii) cutting a slice (104), parallel to the direction (I), of the multi-layer structure obtained at the end of the step (ii), such as to obtain said expected wafer (10).

Description

technical field [0001] The present invention relates to a new method for manufacturing monolithic silicon wafers with vertical p-n multijunctions. Background technique [0002] Such wafers are particularly advantageous in the context of creating photovoltaic cells and modules. [0003] Currently, photovoltaic modules (PV) are mostly manufactured with the assembly of monocrystalline or polycrystalline silicon cells, usually using wafers with electrical conductivity p to produce these cells. [0004] In reasonably sized PV modules (up to m 2 degree), for the wafer size standard (156mm × 156mm) means the open circuit voltage of the PV module (V oc ) is limited to tens of volts. [0005] Various approaches have been investigated in an attempt to increase the voltage V of a PV module oc . [0006] A first option may consist in using materials other than crystalline silicon (Si), especially semiconductors exhibiting a bandgap amplitude greater than 1.1 eV (electron volts) of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/04C30B29/06H01L31/0352H01L31/068H01L31/18H01L31/047H01L31/0288
CPCC30B15/04C30B29/06H01L31/03529H01L31/047H01L31/068H01L31/1804Y02E10/544Y02E10/547Y02P70/50H01L31/0288H01L31/0687H01L31/1876
Inventor 让-保罗·加朗代N·尚特勒伊A·法谢洛E·皮拉特Y·维舍蒂
Owner COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES