Resonance enhanced type broadband impedance matching circuit and matching method

Abstract

The invention discloses a resonance enhanced type broadband impedance matching circuit and a matching method. The matching circuit comprises an impedance transformation network and a resonance compensating network which are in cascade connection with an initial circuit in sequence, wherein the impedance transformation network comprises a resistor Z1 and an impedance Z2 which are connected in parallel; the resonance compensating network comprises impedance Z3 to Z4 which are connected in series. The impedances Z1, Z3 to Z4 are realized by a microstrip line. Parameters of the impedance transformation network are determined by low frequency end matching conditions of the initial circuit; the parameters of the resonance compensating network are determined by high frequency end matching conditions of the initial circuit. The matching method comprises the following steps: firstly, accessing the impedance transformation network and regulating the parameters of the impedance transformation network to realize low frequency end matching; then, accessing the resonance compensating network and regulating the parameters of the resonance compensating network to realize high frequency end matching. According to the resonance enhanced type broadband impedance matching circuit and the matching method, the defects in a conventional compensation technology purely using lumped parameter or distribution parameters are compensated, the matching circuit under required frequency band width is conveniently realized, and the broadband impedance matching is realized.

Description

technical field [0001] The invention relates to a broadband impedance matching circuit and a matching method, in particular to a resonance enhanced broadband impedance matching circuit and a matching method, belonging to the technical field of electronic engineering. Background technique [0002] At present, the bandwidth of optical fiber communication network has broken through the 10THz mark under the application of technologies such as wavelength division multiplexing and orthogonal frequency division multiplexing. Most of them are below 10Gbps, which shows that in the existing communication system, the transmitting and receiving terminals of the signal largely limit the bandwidth of the transmission system. [0003] The intrinsic parameter characteristics of the functional chip in the optical network terminal determine the upper limit of the bandwidth of the device. At the same time, the high-frequency packaging of the device will also introduce additional parasitic para...

AI Technical Summary

Problems solved by technology

The lumped parameter compensation technology uses lumped resistors, capacitors, and inductors to achieve impedance matching. This method has a simple structure and good matching performance at low frequencies. However, due to the limitations of the components used, additional parasitic parameters will be introduced in high-frequency applications.

Distributed parameter compensation technology uses microstrip lines of specific length and width to realize the series-parallel effect of equivalent capacitance and inductance. This method can be applied to higher frequencies, but its disadvantage is that the frequency bandwidth is narrow and cannot be used at low frequencies. Wideband Impedance Matching Near DC

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