Gaas thin film grown on Si substrate and preparation method thereof

A substrate and thin film technology, applied in the field of GaAs thin film and its preparation, can solve the problems affecting the flatness of the surface of GaAs semiconductor devices, achieve the effect of simplifying the structure of the buffer layer and the epitaxial growth process, improving the quality of the crystal, and improving the flatness
CN104835718BActive Publication Date: 2017-12-01SOUTH CHINA UNIV OF TECH
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SOUTH CHINA UNIV OF TECH
Publication Date
2017-12-01

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Abstract

The present invention discloses a GaAs thin film growing on a Si substrate and a method for preparing the same. The method comprises the steps of (1) cleaning the Si substrate; (2) pre-processing the Si substrate; (4) growing a buffer layer, namely growing an InxGa(1-x)As buffer layer on the surface of the Si substrate after the processing of the step (3) at the growth temperature of 350-500 DEG C, wherein the 0.08<x<0.12; and (5) growing the GaAs thin film, namely growing the GaAs thin film at the growth temperature of 500-580 DEG C. The present invention also discloses the GaAs thin film growing on the Si substrate. The GaAs thin film growing on the Si substrate comprises the Si substrate, the InxGa(1-x)As buffer layer and the GaAs thin film which are laminated orderly. The preparation method of the present invention is simple, enables the structure of the buffer layer and an epitaxial growth technology to be simplified greatly, and obtains the GaAs epitaxial thin film which is good in surface appearance and low in residual stress.
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Description

technical field

[0001] The invention relates to a GaAs film and a preparation method thereof, in particular to a GaAs film grown on a Si substrate and a preparation method thereof. Background technique

[0002] Since Si has the advantages of mature technology, low price and easy large-scale size, epitaxial III-V semiconductor materials on silicon, especially GaAs, are very attractive. At present, researchers have successfully epitaxially grown GaAs-based lasers, high-efficiency solar cells and other optoelectronic devices with special optoelectronic properties on Si substrates. Usually, GaAs semiconductor devices are prepared by epitaxial growth on the Si(100) surface. However, there are two problems in the epitaxial growth of GaAs on Si(100). On the one hand, due to the monoatomic step surface of Si(100), there are a large number of reverse domain defects in the epitaxial GaAs film directly on the Si(100) substrate. On the other hand, because Si(100) has a large surface ...

Claims

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