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Test device and method for integrated circuit board and metal layer of integrated circuit

An integrated circuit board, integrated circuit technology, applied in circuits, semiconductor/solid-state device testing/measurement, electrical components, etc., can solve problems such as low efficiency and low accuracy, and improve detection efficiency, improve accuracy, and reduce labor. cost effect

Active Publication Date: 2017-07-14
FOUNDER MICROELECTRONICS INT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, there is no test structure for the metal layer. The existing detection of the metal layer uses a visual inspection method to confirm whether the metal layer is normal, such as using a microscope, but this method is greatly affected by human subjective factors, resulting in accuracy low, and the efficiency of this detection method is very low

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  • Test device and method for integrated circuit board and metal layer of integrated circuit
  • Test device and method for integrated circuit board and metal layer of integrated circuit
  • Test device and method for integrated circuit board and metal layer of integrated circuit

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Embodiment Construction

[0046]In order to solve the technical problem of low detection accuracy and low efficiency of the metal layer of an integrated circuit in the prior art, the present invention provides a test structure, device and method for a metal layer of an integrated circuit. In this technical solution, the embodiment of the present invention designs the test structure of the metal layer, and based on the test structure of the metal layer, the first strip-shaped polysilicon resistor and the plurality of metal strips partially covered by the large-size metal plate in the test structure are partially covered. The square resistance of the second strip-shaped polysilicon resistor is tested to obtain the first resistance value and the second resistance value, and according to the relative change of the first resistance value and the second resistance value, it is determined that the metal plate and the metal strip are made on the same layer Whether there is an abnormality in the metal layer, thr...

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Abstract

The invention relates to the technical field of semiconductor integrated circuits, and discloses an integrated circuit board and a test device and method for an integrated circuit metal layer. The test structure includes: a first strip-shaped polysilicon resistor, and a metal plate located on the first strip-shaped polysilicon resistor and intersecting with the first strip-shaped polysilicon resistor, the length and width of the metal plate are not less than 10 Micron; the second strip-shaped polysilicon resistance, and a plurality of metal strips located on the second strip-shaped polysilicon resistance and intersecting with the second strip-shaped polysilicon resistance, a plurality of metal strips are arranged in parallel and at intervals, and the width of the metal strips is not greater than 3 Micron; the metal plate, the metal strip and the metal layer of the integrated circuit are located on the same layer and manufactured on the same layer. By adopting the technical scheme of the invention, the condition of the metal layer can be detected by electrical testing, so the detection accuracy of the metal layer can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuits, in particular to an integrated circuit board, a test device and method for an integrated circuit metal layer. Background technique [0002] In integrated circuits, metal layers are used for interconnection between devices, as well as pads for package bonding. Among these metal layer structures, some are large-sized metal plates, and some are small-sized. Metal strips (or blocks of metal of small size), some arranged in isolation, some arranged in dense arrangements. [0003] The manufacture of integrated circuits includes the front-end process and the back-end process. The front-end process is a series of process steps implemented on the semiconductor wafer, including photolithography, etching, thin film, metallization, diffusion, oxidation, alloy and other processes. , the manufacturing process of the metal layer belongs to the front-end process; the back-end process o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/544H01L21/66
Inventor 潘光燃文燕王焜石金成高振杰
Owner FOUNDER MICROELECTRONICS INT