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A method for preparing saturable absorber devices based on black phosphorus

A technology of saturable absorption and black phosphorus, which is applied to laser components, lasers, electrical components, etc., can solve the problems of not successfully making saturable absorbers, harsh growth conditions of black phosphorus, and inability to grow thin films, etc., to achieve Improve the success rate of preparation, avoid blind transfer, and improve the yield

Active Publication Date: 2017-10-27
南京科耐激光技术有限公司
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Problems solved by technology

However, so far, black phosphorus has not been successfully made into a saturable absorber and applied to fiber lasers
The main difficulties are: 1. Black phosphorus is unstable and easily denatured when exposed to the air; 2. The growth conditions of black phosphorus are far harsher than graphene, and it is currently impossible to grow large-area films by chemical vapor deposition like graphene , nanoscale black phosphorus flakes can only be obtained by mechanical stripping or liquid phase separation, and it is difficult to align and transfer them to the fiber core with a diameter of less than 10 μm

Method used

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  • A method for preparing saturable absorber devices based on black phosphorus
  • A method for preparing saturable absorber devices based on black phosphorus
  • A method for preparing saturable absorber devices based on black phosphorus

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Embodiment Construction

[0030] Hereinafter, the present invention will be described in detail with reference to the accompanying drawings and the embodiments.

[0031] A method for preparing a saturable absorber device based on black phosphorus, adopts directional transfer technology to deposit two-dimensional layered black phosphorus on an optical fiber head, as the saturable absorption layer of the saturable absorber device.

[0032] As a new type of saturable absorber, black phosphorus can be used for laser Q-switching, mode locking, optical signal processing or pulse shaping. It is a two-dimensional layered atomic crystal material with extremely high carrier mobility and excellent optical properties, which can achieve low unsaturated absorption loss and low saturated absorption intensity. The resonance absorption of black phosphorus can reach 20% to 30%, which can achieve wide-band absorption. In addition, black phosphorus is a direct band gap material with a certain energy band gap. The band gap of ...

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Abstract

The invention discloses a method for preparing a saturable absorber device based on black phosphorus. In this method, the two-dimensional layered black phosphorus obtained by mechanical exfoliation, or the two-dimensional layer distributed in the alcohol solution obtained by ultrasonic vibration Shaped black phosphorus is deposited on the optical fiber head by directional transfer method as the saturable absorbing layer of the device. The directional transfer method involved in the present invention can effectively and efficiently transfer black phosphorus to the optical fiber head, avoiding damage to the material during the manual transfer process, and can accurately locate the position of the nano-scale material, avoiding blindness The transfer problem improves the success rate of saturable absorber preparation. The black phosphorus saturable absorber made by the method of the invention works in a transmission mode, can realize the ultrashort pulse output of the laser in the near-middle infrared working band, has the characteristics of good performance and strong compatibility, and is suitable for Q-switching and locking of the laser applications such as analog and optical signal processing.

Description

Technical field [0001] The invention belongs to the field of saturable absorbers of pulsed lasers, and in particular relates to a method for preparing saturable absorber devices used for Q-switching, mode locking, optical signal processing and the like in lasers. Background technique [0002] At present, the saturable absorber device mainly used in the market is the semiconductor saturable absorber mirror (SESAM), but the semiconductor saturable absorber mirror has many disadvantages that are difficult to overcome. First of all, SESAM requires a complex and expensive clean room-based manufacturing system with complex manufacturing processes and high costs. Secondly, due to the inherent band gap of group III-IV semiconductors, the saturated absorption spectrum is narrow, and is basically limited to the near-infrared band. In the far-infrared band, there is currently no SESAM available; thirdly, the optical damage threshold of SESAM is also very low, making it difficult to apply in...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S3/098H01S3/11
Inventor 鲍桥梁李绍娟陈瑶沐浩然李鹏飞甘胜
Owner 南京科耐激光技术有限公司
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