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Ag-In alloy sputtering target

A sputtering target and ag-in technology, which is applied in sputtering coating, metal material coating process, vacuum evaporation coating, etc., can solve the problem of reduced reflectivity of Ag alloy reflective film

Inactive Publication Date: 2015-08-12
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Thus, when the laminated film is subjected to a heat treatment process, there is a problem that the reflectance of the Ag alloy reflective film decreases before and after the heat treatment.

Method used

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Experimental program
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Effect test

no. 1 Embodiment approach 〕

[0037] First, in order to manufacture the Ag-In alloy sputtering target which concerns on 1st Embodiment of this invention, Ag of purity 99.9 mass % (3N) or more is prepared as a raw material. With regard to the Ag raw material, the above-mentioned purification method is carried out, and the content of Si, Cr, Fe, and Ni is all 30 ppm or less with respect to the formed Ag-In alloy sputtering target, and the total content is only 90 ppm or less. Ag raw materials of Si, Cr, Fe and Ni. The selected Ag raw material and the In raw material having a purity of 99.99% by mass or higher are weighed so as to have a predetermined composition.

[0038] Next, the above-mentioned Ag raw material is melted in a high vacuum or an inert gas atmosphere, and a predetermined content of In raw material is added to the obtained molten metal. Thereafter, melting is carried out in a high vacuum or an inert gas atmosphere to produce a molten cast ingot of an Ag alloy containing a predetermined atomic...

no. 2 Embodiment approach 〕

[0048] Next, the case of manufacturing the Ag-In alloy sputtering target of 2nd Embodiment of this invention is demonstrated below.

[0049] As in the case of the first embodiment, Ag with a purity of 99.9% by mass (3N) or higher is prepared as a raw material for target production, and the above-mentioned purification method is performed on this Ag raw material, and the Ag-In alloy that is formed is selected. The sputtering target contains an Ag raw material whose Si, Cr, Fe, and Ni contents are all 30 ppm or less, and whose total content is 90 ppm or less. The selected Ag raw material and the In raw material and the Sb raw material having a purity of 99.99% by mass or more are weighed so as to have a predetermined composition.

[0050] Next, the above-mentioned Ag raw material is melted in a high vacuum or an inert gas atmosphere, and predetermined contents of the In raw material and the Sb raw material are added to the obtained molten metal. Thereafter, melting is carried o...

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Abstract

The present invention provides an Ag-In alloy sputtering target for which abnormal discharge and splashing are reduced when sputtering to form a reflector electrode film from an Ag-In alloy. This Ag-In alloy sputtering target has a composition that contains 0.1-1.5 atom% of In, with the remainder consisting of Ag and unavoidable impurities. The content of each of the elements Si, Cr, Fe and Ni is 30 ppm or lower and the total content of these elements is 90 ppm or lower.

Description

technical field [0001] The invention relates to an Ag alloy sputtering target for forming a reflective electrode film, and the reflective electrode film is used in an organic electroluminescent (EL) element or a light emitting diode (LED). [0002] This application claims priority based on Patent Application No. 2012-279065 filed in Japan on December 21, 2012 and Patent Application No. 2013-221977 filed in Japan on October 25, 2013, and the contents thereof are incorporated herein. Background technique [0003] The light extraction method of the organic EL element in the organic EL display device includes a bottom emission method that extracts light from the transparent substrate side, and a top emission method that extracts light from the side opposite to the substrate. Among them, the top emission method has a high aperture ratio. It is beneficial for high brightness. Conventionally, in top-emission organic EL elements, a reflective electrode film made of Al or Al alloy, ...

Claims

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Application Information

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IPC IPC(8): C23C14/34C22C5/06
CPCC22C5/06C23C14/3414C23C14/3407
Inventor 野中庄平小见山昌三
Owner MITSUBISHI MATERIALS CORP
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