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Array substrate, array substrate manufacturing method and display device

A technology for array substrates and display devices, applied in the fields of semiconductor/solid-state device manufacturing, optics, instruments, etc., can solve the problem of not being able to maintain the voltage applied to the liquid crystal display pixel, and achieve downsizing, reducing off-state current, and increasing aperture ratio. Effect

Active Publication Date: 2018-02-13
BOE TECH GRP CO LTD
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the problem in the related art that the current off-state current cannot maintain the voltage applied to the pixels of the liquid crystal display at a low refresh rate, an embodiment of the present invention provides an array substrate, a manufacturing method of the array substrate, and a display device

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  • Array substrate, array substrate manufacturing method and display device
  • Array substrate, array substrate manufacturing method and display device
  • Array substrate, array substrate manufacturing method and display device

Examples

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Embodiment Construction

[0043] Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numerals in different drawings refer to the same or similar elements unless otherwise indicated. The implementations described in the following exemplary examples do not represent all implementations consistent with the present invention. Rather, they are merely examples of apparatuses and methods consistent with aspects of the invention as recited in the appended claims.

[0044] figure 1 is a schematic structural diagram of an array substrate according to an exemplary embodiment. The array substrate can include:

[0045] Substrate 110.

[0046] A pattern including a gate 120 and a gate insulating layer ( figure 1 not shown). A pattern including the semiconductor layer 140 is formed on the substrate 110 on which the gate insulating layer is formed.

[0047] ...

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Abstract

The invention relates to an array substrate, a method for manufacturing the array substrate and a display device, and belongs to the field of display technology. The method includes: a substrate; a pattern including a gate and a gate insulating layer are sequentially formed on the substrate, and the pattern including the gate includes a plurality of gates; a pattern including a semiconductor layer is formed on the substrate on which the gate insulating layer is formed; The patterns of the source and the drain are formed on the substrate with the pattern of the semiconductor layer, the patterns of the semiconductor layer are respectively connected to the source and the drain, and the distance from the first connection point to the second connection point on the pattern of the semiconductor layer longer than either side of the gate. The invention increases the resistance between the source and the drain by increasing the distance between the source and the drain, and then reduces the off-state current, which solves the problem that the current off-state current in the related art cannot be kept loaded on the liquid crystal display at a low refresh frequency. The problem of the voltage of the pixel; the effect of maintaining the voltage loaded on the pixel of the liquid crystal display at a low refresh rate is achieved.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate, a method for manufacturing the array substrate, and a display device. Background technique [0002] Thin Film Transistor Liquid Crystal Display (TFT-LCD for short) has the characteristics of small size, low power consumption, and no radiation, and occupies a dominant position in the current flat panel display market. [0003] Metal oxide TFT is an emerging technology in recent years, with large on-state current, high mobility, good uniformity, transparency, and simple manufacturing process, which can better meet the needs of large-size liquid crystal displays and active organic electroluminescence. Has attracted people's attention. The on-state current of a metal oxide TFT is more than 50 times that of an amorphous silicon TFT, and the off-state current is generally 10 -11 A (An) to 10 -12 Between A. And using a low refresh rate for static images ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12H01L21/77G02F1/1362
CPCH01L27/1225H01L29/41733H01L29/66969H01L29/7869H01L29/78696H01L27/1259H01L29/42356H01L29/42376H01L29/42384
Inventor 刘翔
Owner BOE TECH GRP CO LTD