Low voltage high-performance low-power dissipation C unit
A high-performance, low-power technology, applied in the field of C units, can solve the problems of incompatibility, large dynamic power consumption and leakage power consumption, and no consideration of power consumption suppression technology, so as to achieve a simple and clear circuit structure and low dynamic power consumption. , the effect of reducing static power consumption
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment
[0014] Example: such as image 3 As shown, a low-voltage, high-performance, low-power C unit includes a PMOS pull-up unit and an NMOS pull-down unit. The PMOS pull-up unit includes a first PMOS transistor P1 and a second PMOS transistor P2, and the source of the first PMOS transistor P1 1. Both the substrate of the first PMOS transistor P1 and the substrate of the second PMOS transistor P2 are connected to the power supply, the drain of the first PMOS transistor P1 is connected to the source of the second PMOS transistor P2, and the drain of the second PMOS transistor P2 It is connected to the drain of the first NMOS transistor N1, the source of the first NMOS transistor N1 is connected to the drain of the second NMOS transistor N2, the substrate of the first NMOS transistor N1, the source of the second NMOS transistor N2 and the second The substrates of the NMOS transistor N2 are all grounded, the gate of the first PMOS transistor P1 is connected to the gate of the second NMO...
PUM

Abstract
Description
Claims
Application Information

- Generate Ideas
- Intellectual Property
- Life Sciences
- Materials
- Tech Scout
- Unparalleled Data Quality
- Higher Quality Content
- 60% Fewer Hallucinations
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com