Low voltage high-performance low-power dissipation C unit

A high-performance, low-power technology, applied in the field of C units, can solve the problems of incompatibility, large dynamic power consumption and leakage power consumption, and no consideration of power consumption suppression technology, so as to achieve a simple and clear circuit structure and low dynamic power consumption. , the effect of reducing static power consumption

Active Publication Date: 2015-08-26
NINGBO UNIV
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional weak feedback C unit includes a pull-up unit composed of two PMOS transistors, a pull-down unit composed of two NMOS transistors, and two inverters. The traditional weak feedback C unit has a simple structure and fast speed, but it does not have

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low voltage high-performance low-power dissipation C unit
  • Low voltage high-performance low-power dissipation C unit
  • Low voltage high-performance low-power dissipation C unit

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0014] Example: such as image 3 As shown, a low-voltage, high-performance, low-power C unit includes a PMOS pull-up unit and an NMOS pull-down unit. The PMOS pull-up unit includes a first PMOS tube P1 and a second PMOS tube P2. The source of the first PMOS tube P1 , The substrate of the first PMOS tube P1 and the substrate of the second PMOS tube P2 are both connected to the power source, the drain of the first PMOS tube P1 is connected to the source of the second PMOS tube P2, and the drain of the second PMOS tube P2 Connected to the drain of the first NMOS tube N1, the source of the first NMOS tube N1 is connected to the drain of the second NMOS tube N2, the substrate of the first NMOS tube N1, the source of the second NMOS tube N2, and the second The substrates of the NMOS transistor N2 are all grounded, the gate of the first PMOS transistor P1 is connected to the gate of the second NMOS transistor N1 and the connection end is the first signal input terminal, and the gate of...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a low voltage high-performance low-power dissipation C unit, comprising a PMOS pull-up unit, an NMOS pull-down unit, a signal drive door, a weak feedback door and a ground feedback unit; wherein the signal drive door and the weak feedback door are used for forming an interlocked phase inverter to store data, and the ground feedback door is used for controlling the working states of the signal drive door and the weak feedback door. When a first signal input end and a signal input end of the low voltage high-performance low-power dissipation C unit is accessed with an input signal, the signal drive door and the weak feedback door are worked under a weak working condition to reduce current or are controlled by the ground feedback door so that power dissipation is rapidly reduced. The low voltage high-performance low-power dissipation C unit of the invention has the advantages of low dynamic power consumption and leakage power consumption and can be applied in a low voltage environment. In NCSU PTM 45nm CMOS technology, when the supply voltage is 0.5V, and the frequency of a first input signal accessed by the first signal input end is 100 MHz, and the frequency of a second input signal B accessed by a second signal input end is 50 MHz, the low voltage high-performance low-power dissipation C unit of the invention reduces dynamic power consumption by 49.6 percent and quiescent dissipation by 11.1 percent, and improves performance by 34.3 percent in comparison with a weak feedback C unit.

Description

technical field [0001] The invention relates to a C unit, in particular to a C unit with low voltage, high performance and low power consumption. Background technique [0002] As the integrated circuit process enters the nanometer scale, the chip integration level increases and the clock frequency increases, resulting in a rapid increase in chip dynamic power consumption. The increase of dynamic power consumption has brought many problems, such as: the temperature rise caused by the increase of power consumption will reduce the reliability and stability of the device, and also bring about packaging and heat dissipation problems. Another problem with increased chip power consumption is excessive energy consumption and environmental protection. With the widespread use of electronic equipment, the cost of electricity for electronic equipment will exceed the cost of hardware in the next few years. In addition, with the widespread use of battery-powered devices such as laptops,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H03K19/0948
Inventor 邬杨波董恒锋杨金龙赵旭
Owner NINGBO UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products