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A kind of tiw film layer corrosion method

A technology of film layer and corrosion solution, which is applied in the direction of coating, metal material coating process, ion implantation plating, etc., can solve the problems affecting the corrosion effect of TiW film layer, affecting the production yield and production efficiency of multilayer film products , to achieve the effect of guaranteeing corrosion effect, facilitating production operation and improving stability

Active Publication Date: 2018-02-09
XIAN INSTITUE OF SPACE RADIO TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Problems in the use of traditional hydrogen peroxide (H2O2) corrosive liquid affect the corrosion effect of TiW film, and also affect the production yield and production efficiency of multilayer film products

Method used

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  • A kind of tiw film layer corrosion method
  • A kind of tiw film layer corrosion method
  • A kind of tiw film layer corrosion method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] The continuous sputtering method is used to generate TaN, TiW, Ni, and Au in order to form a multi-layer thin film (TaN)-TiW-Ni-Au film system, and then use a mask photolithography method to uniformly coat the film substrate Glue, exposure, development, followed by etching the Au layer, Ni layer according to the conventional process, then the TiW layer, and finally the TaN layer according to the conventional process to obtain the required circuit pattern, such as figure 1 Shown is the corrosion process diagram of the present invention for the TaN-TiW-Ni-Au multilayer film structure.

[0054] The TiW film is obtained by a magnetron sputtering method, and the target is a TiW alloy target, in which 10% of Ti and 90% of W are uniformly mixed, and the film thickness is 500 angstroms.

[0055] The volume ratio of hydrogen peroxide, ammonia and phosphoric acid is: hydrogen peroxide: ammonia: phosphoric acid=65ml:28ml:6ml.

[0056] The mass concentration of hydrogen peroxide is 40%, t...

Embodiment 2

[0060] The continuous sputtering method is used to generate TaN, TiW, Ni, and Au in order to form a multi-layer thin film (TaN)-TiW-Ni-Au film system, and then use a mask photolithography method to uniformly coat the film substrate Glue, exposure, development, followed by etching the Au layer, Ni layer according to the conventional process, then the TiW layer, and finally the TaN layer according to the conventional process to obtain the required circuit pattern, such as figure 1 Shown is the corrosion process diagram of the present invention for the TaN-TiW-Ni-Au multilayer film structure.

[0061] The TiW film is obtained by a magnetron sputtering method, and the target is a TiW alloy target, in which 10% of Ti and 90% of W (mass percentage content) are uniformly mixed, and the film thickness is 500 angstroms.

[0062] The volume ratio of hydrogen peroxide, ammonia, and phosphoric acid is: hydrogen peroxide: ammonia: phosphoric acid=65ml:25ml:5ml.

[0063] The mass concentration of ...

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Abstract

The invention relates to a TiW film corrosion method. Aiming at the defects in the corrosion process of the traditional hydrogen peroxide on the TiW film, an innovative design is carried out on the components and proportions of the corrosion solution, and the catalyst-ammonia and the stabilizer-phosphoric acid are added to the hydrogen peroxide. At the same time, through a large number of tests, the ratio of the three was optimized, and the corrosion process conditions were optimized, which significantly improved the stability, corrosion speed and corrosion capacity of the corrosion solution, and ensured high-quality corrosion effects; a large number of tests showed that By adopting the corrosion solution and the corrosion method of the invention, the success rate of corrosion reaches 100%, and the service life of the corrosion solution is extended by more than 3 times, which facilitates the production operation and ensures the corrosion quality.

Description

Technical field [0001] The invention relates to a TiW film corrosion method, belonging to the technical field of corrosion processing and manufacturing technology. Background technique [0002] As a high melting point and high temperature resistant material, TiW mainly plays a role in blocking metal diffusion and improving circuit temperature resistance and interlayer bonding or adhesion in the production of microwave multilayer film circuits. Its production process includes film layer Sputtering and corrosion. [0003] (TaN)-TiW-Ni-Au film system is to use continuous sputtering method to generate TaN, TiW, Ni, Au in sequence to form a multilayer film, and then use mask photolithography to homogenize the film on the film substrate , Exposure, development, followed by corrosion of Au, Ni, TiW, TaN, and then obtain the required circuit pattern. During the research process of the film system, the corrosion test of the TiW film found that the traditional etching solution (hydrogen per...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23F1/26C23C14/58
Inventor 白浩王平
Owner XIAN INSTITUE OF SPACE RADIO TECH