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A method for growing organic-inorganic compound semiconductor crystals by high isostatic pressure

An inorganic compound and semiconductor technology, applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of difficulty in finding a solvent, poor thermal stability, etc., and achieve the effects of easy high quality, inhibition of decomposition, and easy growth.

Inactive Publication Date: 2017-07-11
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, for organic-inorganic compound semiconductor materials, due to their poor thermal stability and difficulty in finding suitable solvents, the above two types of methods have encountered great difficulties in growing organic-inorganic compound semiconductor crystal materials. difficulty

Method used

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  • A method for growing organic-inorganic compound semiconductor crystals by high isostatic pressure
  • A method for growing organic-inorganic compound semiconductor crystals by high isostatic pressure
  • A method for growing organic-inorganic compound semiconductor crystals by high isostatic pressure

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Embodiment 1

[0035] A method for growing an organic-inorganic compound semiconductor crystal by high isostatic pressure, comprising the following steps:

[0036] (1) 0.1g dibutyl bipyridine-I 2 The powder of the complex was mixed evenly with 0.5 microliters of ethanol to obtain a mixture,

[0037] (2) Wrap and seal the mixture prepared in step (1) with a polytetrafluoroethylene film, place the sealed sample in the autoclave, fill it with silicone oil and seal it, apply a pressure of 250MPa, and heat the autoclave to 200 ℃ constant temperature for 48 hours to grow crystals, after the crystal growth process, naturally cool to room temperature, return to normal pressure, that is, dibutylbipyridine-I 2 complex crystals.

[0038] The dibutyl bipyridine-I that present embodiment makes 2 XRD of complex crystals such as figure 1 As shown, the infrared absorption spectrum is shown as image 3 shown.

[0039] The raw material dibutylbipyridine-I in embodiment 1 2 The complex powder was subjecte...

Embodiment 2

[0041] Embodiment 2: The preparation method is the same as in Example 1, except that the amount of ethanol added is 20 microliters.

Embodiment 3

[0042] Embodiment 3: The preparation method is the same as in Example 1, except that the amount of ethanol added is increased to 80 microliters.

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Abstract

The invention relates to a method for growing organic-inorganic compound semiconductor crystals in higher static pressure, which comprises the steps: organic-inorganic compound semiconductor powder and a little of solvent are uniformly mixed, then are sealed in higher static pressure, and are heated to constant temperature 60-350 DEG C for 6-720 hours to grow crystals, thereby obtaining organic-inorganic compound semiconductor crystals. The method for growing the organic-inorganic compound semiconductor crystals in the higher static pressure can restrain organic-inorganic compound semiconductors to decompose on one hand by leading in the higher static pressure, can supply an isotropous environment without residual stress for growth of crystals on the other hand, and drives particles to combine with each other and grow. Simultaneously, the method for growing the organic-inorganic compound semiconductor crystals in the higher static pressure promotes transportation of material molecular and dissolve-repreparation process by adding a little of solvent into compound semiconductors, and is easy to grow the organic-inorganic compound semiconductor crystals which are high in quality and big in sizes.

Description

technical field [0001] The invention relates to a method for growing organic-inorganic compound semiconductor crystals under high isostatic pressure, belonging to the technical field of semiconductor materials and device manufacturing. Background technique [0002] With the rapid development of modern information and energy technology, the requirements for semiconductor materials are becoming more and more stringent. For example, in addition to requiring materials to have high photoelectric conversion efficiency and carrier mobility, materials are often required to have high stability, good processability, low cost, and wide-range controllability of structure and performance. comprehensive performance. Judging from the current situation, to fully meet these requirements, a single organic and inorganic material is powerless. Naturally, people will try to combine organic materials and inorganic materials, and combine the advantages of the two to prepare organic-inorganic com...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/54C30B7/10
Inventor 崔得良刘阳赵天宇刘陟廉刚赵丹宋思德王琪珑
Owner SHANDONG UNIV